Mechanical Data ∙ Case: SOT-323 ∙ Case Material: Molded Plastic, “Green” Molding Compound.UL Flammability Classification Rating 94V-0 ∙ Moisture Sensitivity: Level 1 per J-STD-020 ∙ Terminal Connections: See Diagram Below ∙ Terminals: Finish - Matte Tin annealed over Alloy 42 lea...
STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STD3PK50Z VDS 500 V RDS(on) max. 4Ω ID 2.8 A PTOT 70 W Gate charge minimized ...
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB 3 2 1 TO-220FP TAB 3 2 1 TO-220 IPAK 3 2 1 Figure 1. ...
NTMS4177P MOSFET – Power,P-Channel, SOIC-8 -30 V , -11.4 A Features •Low R DS(on ) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOIC −8 Surface Mount Package Saves Board Space •...
JMTL2301C Description JMT P-channel Enhancement Mode Power MOSFET Features VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
参数 符号值单位 漏源电压V DS -20 V 栅源电压V GS ±12漏极电流I D -3 A 漏极脉冲电流 I DM -1 工作结温和存储温度范围 T J ,T stg -50to 150℃ 注：重复性极限值：脉冲宽度由最高结温限制。1 2 3 3 21D C B A Source Drain Gate Internal Schemaic Diagram P-Channel MOSFET ...
时的能带简图 Fig.2 alencebanddiagram f rh lewriting 0' (aD h lding 0'(bD writing 1'(cDandh lding 1'(dDinthe perati n fp-channel e/Siheter - nan crystalbasedMOSFETmem ry 这里可以清楚看到电荷存储单元用锗 / 硅异质 纳米晶粒代替硅纳米晶粒单一...
MOSFET –P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P SOT−23 CASE 527AG General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. D Features • –...
This P−Channel MOSFET is produced using onsemi ’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max r DS(on) = 53 m W at V GS = −10 V, I D ...
JMTP240C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features N-Channel: 30V, 9A RDS(ON) < 21mΩ @ VGS = 10V RDS(ON) < 33mΩ @ VGS = 4.5V P-Channel: -30V, -7A RDS(ON) < 35mΩ @ VGS = -10V RDS(ON) < 54mΩ @ VGS = -4.5V Excellent ...