其中 SILICIDE 就是金属硅化物 是由金属和硅经过物理 化学 反应形成的一种化合态 其导电特性介于金属和硅之间 而 POLYCIDE 和 SALICIDE 则是分别 指对着不同的形成 SILICIDE 的工艺流程 下面对这两个流程的区别简述如下 POLYCIDE 其一般制造过程是 栅氧化层完成以后 继续在其上面生长多晶硅(POLY-SI 然后在 POLY...
A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p- type impurities ...
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具体的方块电阻值会受到多种因素的影响,包括金属的种类、反应条件、硅的纯度等。因此,要准确确定Silicide的方块电阻,需要进行具体的实验和测量。 总之,Silicide技术是半导体工艺中降低多晶硅栅和有源区方块电阻的重要手段。通过Polycide和SALICIDE等形成方式,可...
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide. I P Nikitina,K V Vassilevski,N G Wright,... IP Nikitina,KV Vassilevski,NG Wright,... - 《Journal of Applied Physics》 被引量: 198发表: 2005年 Improvement of pin-type amorphous...
Crystal structure of caesium gallium(III) cöte«ö-[monohydrogenmonoborate- bis(monophosphate)], CsGa[BP2O8(OH)] Crystal structure of yttrium borosilicide, Y5Si2-xB8(x=0.13) Crystal structure of 4-(2-oxobenzothiazolin-3-yl)butanoic acid, C11H11NO3S Crystal structure of 2,3,...
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Appl. Phys. Lett. 2000, 76, 1713–1715. [Google Scholar] [CrossRef] [Green Version] Elahipanah, H.; Asadollahi, A.; Ekström, M.; Salemi, A.; Zetterling, C...
英文名称:poly(sodiumacrylate)macromolecule CAS号码:9003-04-7 产品类别:有机钠 外观与性状:淡灰色结晶固体 密度:1.15(30%aq.) 沸点:141oC 熔点:12.5oC 折射率:n20/D1.43 中文名称:对氯苯肼盐酸盐 英文名称:4-Chlorophenylhydrazinehydrochloride CAS号码:1073-70-7 ...
Crystal structure of triterbium tribromide monosilicide, Tb3Br3Si Refinement of the crystal structure of potassium triyttrium decafluoride, KY3F10 Crystal structure of caesium niobium tungsten bronzes, Cs0.23(Nb0.09W0.91)O3 and Cs0.29(Nb0.10W0.90)O Crystal structure of dibarium pentaborate chlo...
A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially 03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The 03-38ü plane forms an angle of approximately 35 DEG with respect to the <0001> axial directio...