Borides, silicides and phosphides: A critical review of their preparation, properties and crystal chemistry. Acta Crystallogr. 1966, 20, 323–324. [Google Scholar] Lundström, T. Preparation and crystal chemistry of some refractory borides and phosphides. Ark. Kemi 1969, 31, 227–266. [...
其中 SILICIDE 就是金属硅化物 是由金属和硅经过物理 化学 反应形成的一种化合态 其导电特性介于金属和硅之间 而 POLYCIDE 和 SALICIDE 则是分别 指对着不同的形成 SILICIDE 的工艺流程 下面对这两个流程的区别简述如下 POLYCIDE 其一般制造过程是 栅氧化层完成以后 继续在其上面生长多晶硅(POLY-SI 然后在 POLY...
A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p- type impurities ...
其中, SILICIDE 就是金属硅化物, 是由金属和硅经过物理-化学 反应形成的一种化合态, 其导电特性介于金属和硅之间, 而 POLYCIDE 和 SALICIDE则是分别 指对着不同的形成 SILICIDE 的工艺流程, 下面对这两个流程的区别简述如下: POLYCIDE: 其一般制造过程是, 栅氧化层完成以后, 继续在其上面生长多晶硅(POLY-SI)...
在半导体工艺制程中,Silicide技术被广泛应用以降低多晶硅栅和有源区的方块电阻。多晶硅栅的方块电阻可能会很高,通过Silicide技术,可以有效地降低多晶硅栅和有源区的方块电阻,从而提高半导体器件的性能。 二、Silicide的形成方式 1. 多晶硅金属氧化物(Polycide...
Effect of temperature on the electrical resistivity of [YBa.sub.2][Cu.sub.3][O.sub.[7-x]]/polyethylene composite materials Heterogeneous materials composed of conducting [YBa.sub.2][Cu.sub.3][O.sub.[7-x]] particles randomly dispersed inside an insulating low density polyethylen... S Bh...
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide. I P Nikitina,K V Vassilevski,N G Wright,... IP Nikitina,KV Vassilevski,NG Wright,... - 《Journal of Applied Physics》 被引量: 198发表: 2005年 Improvement of pin-type amorphous...
NiSi-silicided p(+) n shallow junctions are fabricated by BF(2)(+) implantation into/through a thin NiSi silicide layer, followed by rapid thermal annealin... C Wang,Y Wu,W Wu,... - 《Japanese Journal of Applied Physics Part》 被引量: 6发表: 2005年 ...
In various implementations, the p-type metal gate226and n-type metal gate228may include a metal, a metal alloy, a metal nitride, a metal silicide, or a metal oxide. In some implementations, the p-type metal gate226and n-type metal gate228may contain titanium, titanium aluminum alloy, tan...
Magnetic properties in epitaxial binary iron and ternary iron-cobalt silicide thin films grown on Si(1 1 1) Binary Fe(Si 1− xFe x) iron and ternary Fe 3− yCo ySi iron cobalt silicide thin films (thickness : 200 Å) with local CsCl structure epitaxially gr... D Berling,P Be...