A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p- type impurities ...
其中,SILICIDE就是金属硅化物,是由金属和硅经过物理-化学反应形成的一种化合态,其导电特性介于金属和硅之间,而POLYCIDE和SALICIDE则是分别指对着不同的形成SILICIDE的工艺流程,下面对这两个流程的区别简述如下:POLYCIDE:其一般制造过程是,栅氧化层完成以后,继续在其上面生长多晶硅(POLY-SI),然后在POLY上继续生长金属...
We have also obtained gate sheet resistance of 4-5 Omega / Square Operator at 0.1 mu m gate length using platinum silicide. To reduce the overlap capacitance due to a relatively deep junction, a two-step sidewall process was implemented.<...
SILICIDE POLYCIDE SALICIDE 区别 2010-04- 11SILICIDE POLYCIDE SALICIDE 区别原文是在哪个论 坛上面问人时 别人的回答 的 当时是英 文的 现在自 己翻译的 原 来放在自己 Spac e上的 现在打算关 掉 Space 在 这里存个档: 首先 这三个名词对应的应用应该是一样的 都是利用硅化物来降低 POLY上的连接电阻...
For example, silicide features may be formed by silicidation such as self-aligned silicide (salicide) in which a metal material is formed next to Si structure, then the temperature is raised to anneal and cause reaction between underlying silicon and the metal to form silicide, and un-react...
Elish, Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction. J. Vac. Sci. Technol. A 20, 754–761 (2002) Article CAS Google Scholar A. Arulanantham, S. Valanarasu, A. Kathalingam, K. Jeyadheepan, J. Mater. Sci. Mater. ...
25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study Semicond. Sci. Technol., 38 (2023), Article 055010, 10.1088/1361-6641/acc199 View in ScopusGoogle Scholar [2] A. Blakers Developme...
APPLIED MATERIALS 0240-35821W KIT/CH TUNGSTEN (LAMP DRIVER) SPU004XX APPLIED MATERIALS 0240-35977 KIT,TUNGSTEN MONO SILICIDE UN APPLIED MATERIALS 0240-35989 KIT,BASIC FRONT PANEL,CKNTURA APPLIED MATERIALS 0240-36020 KIT,VACCUM, POS C,BWCVD CHAM ...
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Crystal structure of calciumdisilicide, 3R-CaSi2 Refinement of the crystal structure of 1,3,5,7-thioxo-2,4,6,8,9,10-hexathial, 1,3,5,7-tetraphosphatricyclo[3.3.1.13,7]decane, tetraphosphorus decasulfide, P4S10 Crystal structure of palladium iodotellurate iodide, PdTeI2 Crystal struct...