nano-imprint lithography 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 纳米压印光刻 翻译结果2复制译文编辑译文朗读译文返回顶部...
nano-imprint lithography(纳米压印技术) 纳米压印技术突破了传统光刻在特征尺寸减小过程中的难题,具有分辨率高、低成本、高产率的特点。自1995年提出以来,纳米压印已经经过了14年的发展,演变出了多种压印技术,广泛应用于半导体制造、mems、生物芯片、生物医学等领域。被誉为十大改变人类的技术之一。 NIL的基本思想是通过...
1) nano-imprint lithography 纳米平板印刷术1. In the last decade, due to the development of nano-imprint lithography (NIL) technique, solid-s. 在过去十多年时间里,得益于NIL(纳米平板印刷术)的发展,固体激光器越来越受LOC(芯片实验)的青睐。
W.J. Dauksher et al., “Nano-imprint lithography: Templates, imprinting and wafer pattern transfer”, Microelectronic Engineering, vol. 83, Issues 4-9, Apr.-Sep. 2006 (Abstract).Nano-imprint lithography: Templates, imprinting and wafer pattern transfer[J] . W.J. Dauksher,N.V. Le,E.S....
前不久TechInsights发了一篇光刻技术当前发展现状的eBook,提到除了EUV光学曝光以外,lithography技术三个可能有前途的方向,包括NIL(nano-imprint lithography)、DSA(direct self-assembly)、EBL(electron beam lithography)。NIL纳米压印。 û收藏 1 评论 ñ赞 ...
NIL(nano-imprint lithography)纳米压印技术216 18/5 返回列表 上一页 1 2 3 4 5 查看: 15192 | 回复: 215 只看楼主@他人 存档 新回复提醒 (忽略) 收藏 在APP中查看 相关版块跳转 微米和纳米 我要订阅楼主 zhaoyuan0426 的主题更新 216 18/5 返回列表 上一页 1 2 3 4 5 ...
athe passage is mainly about the invention of labor-saving machinery 段落是主要关于省力的机械的发明[translate] aEnhanced performance of solar cells with anti-reflection layer fabricated by nano-imprint lithography 提高太阳能电池有被制作的反反映层的表现所作毫微印平版印刷术[translate]...
{Proceedings Symposium IEEE/LEOS Benelux Chapter}, editor = {Megret, P and Wuilpart, M and Bette, S and Staquet, N}, isbn = {2-9600226-4-5}, pages = {63--66}, title = {Nano imprint lithography for photonic structure patterning}, url = {http://dx.doi.org/1854/4557}, year =...
A nano imprint lithography apparatus includes a stamp including a main body having a first surface and a second surface, the first surface having a pattern to be imprinted on a substrate, and the second surface having at least one pole and at least one actuator configured to apply force to ...
$苏大维格(SZ300331)$ 真他妈冤枉啊。。。据了解, 佳能 的纳米压印光刻(Nano-Imprint Lithography,NIL)技术可实现最小线宽14nm的图案化,相当于生产目前最先进的逻辑半导体所需的5nm节点。此外,随着掩模技术的进一步改进,NIL有望实现最小线宽为10nm的电路图案,