Electrical engineering Multi-threshold CMOS circuit design methodology from 2D to 3D UNIVERSITY OF ARKANSAS Jia Di ThianRossA new and exciting approach in digital IC design in order to accommodate the Moore's law is 3D chip stacking. Chip stacking offers more transistors per chip, reduced wire ...
An integrated circuit including a Multi-Threshold CMOS (MTCMOS) latch combining low voltage threshold CMOS circuits with high voltage threshold CMOS circuits. The low voltage threshold circuits including a majority of the circuits in the signal path of the latch to ensure high performance of the lat...
Multi-threshold CMOS (MTCMOS) is the most widely used circuit technique for suppressing subthreshold leakage currents in idle circuits. When a conventional MTCMOS circuit transitions from SLEEP mode to ACTIVE mode, voltages of power and ground distribution networks are disturbed. ...
aDesign user interface, inputs and outputs for the given problem. 设计用户界面、输入和输出为特定问题。[translate] a1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS 1-V电源高速数字电路技术以multithreshold电压CMOS[translate]...
A new power-down circuit scheme using data-preserving complementary pass transistor flip-flop circuit for low-power, high-performance Multi-Threshold voltage CMOS (MTCMOS) LSI is presented. The proposed circuit can preserve a stored data during power-down period while maintaining low leakage current ...
This paper proposes a low-power carry look-ahead adder using multi-threshold voltage CMOS. The designed adder is compared with conventional CMOS adder. The propagation delay time is reduced by using low-threshold voltage transistor in the critical path. Also, the power consumption is reduced by ...
low-voltage circuitspower controlsilicon-on-insulator technologyThis paper proposes a multithreshold CMOS (MTCMOS) circuit that uses SIMOX process technology. ... F Leynadier - 《Revue Française Dallergologie Et Dimmunologie Clinique》 被引量: 0发表: 1997年 加载更多来源...
1. New auto-bulk-biased multi-threshold SOI CMOS circuit operating at high temperature; 一种自动体偏置多阈值电压高温SOI CMOS电路2) threshold voltage 阈值电压 1. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET; 应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究 ...
PURPOSE: A flip-flop circuit of having a multi-threshold voltage CMOS and a method of driving the same are provided to implement high speed operation in an active mode while minimizing power consumption in a sleep mode. CONSTITUTION: A first latch unit(500) updates an output signal according ...
GOTFET characteristics were simulated using industry-standard \(\hbox {synopsys}^{extregistered }\) TCAD tools, while the benchmarking with an equivalent CMOS technology was carried out using the standard 45-nm CMOS library in industry-standard \(\hbox {cadence}^{extregistered }\) EDA tool. ...