Practical, Experimental/ CMOS integrated circuitsinsulated gate field effect transistorsintegrated circuit technologyion implantation/ ion implantationn-channel MOSFETmultiple threshold voltageNMOS devicesfocused ion beamsthreshold voltage controlsp-channel MOSFETs...
Several of the current-mode CMOS multiple-valued-logic (MVL) circuits that the author has studied over the past decade are reviewed. These circuits include a simple current threshold comparator, MVL encoders and decoders, quaternary threshold logic full adders (QFAs), MVL latches, latched QFA ...
The sub-threshold and gate leakages have now become a major contributor to total power dissipations. This paper presents two flip-flops based on dual-threshold CMOS and multiple leakage reduction techniques to reduce their leakage dissipations. In the DT-TG FF (Dual-Threshold Transmission Gate ...
A functional MOS transistor featuring gate-level weighted sum and threshold operations MOS). The device is composed of a floating gate and multiples of input gates that capacitively interact with the floating gate. As the gate-level sum opera... SHITABA,T. - 《Electron Devices IEEE Transactions...
Increasing leakage current makes single-threshold IDDQ testing ineffective for differentiating defective and defect-free chips. Quiescent-signal analysis is a new detection and diagnosis technique that uses IDDQ measurements at multiple chip supply ports, reducing the leakage component in each measurement an...
In addition, the postsynaptic currents of the channel directly connect to the very large scale integration (VLSI) implementation of the LIF mode that can convert high-frequency information into spare pulses based on the threshold of membrane potential. The leaky integrator block, firing/detector ...
to apply current to the multiple matchline MML. Application of current to the multiple matchline MML by the current source332will eventually raise its voltage level over time. When the voltage level of MML reaches the threshold voltage (minimum voltage required to turn on a transistor) for the...
transistors 34 are used with resistor network R5 (connected between Vcc and node PNAND), and are also preferably used with resistor network R7, so that a threshold voltage drop does not appear across a resistor 30 when its shorting transistor is turned on by the associated fuse circuit 36. ...
Gentil. (2006) Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor. IEEE Transactions on Electron Devices 53, 2569-2577. . Online publication date: 1-Oct-2006. K. Akarvardar, B.M. Dufrene, S. Cristoloveanu, P. Gentil, B...
4404480 High speed-low power gallium arsenide basic logic circuit 1983-09-13 Ransom et al. 307/450Foreign References: EP0041415 1981-12-09 307/450 Fast logic operator with high fan-in and complex logic function, using at least two low-threshold field effect transistors. EP0084844 1983-08-...