includingION/IOFF, subthreshold swing (SS),VTHandµFE. A lowSSfor fast switching, highION/IOFFand positiveVTHfor low leakage current and low-power circuits, and high mobility for large drive current are desired. Especially, the mobility of the ZnO TFT is of particular importance...
(BJTs) withturn-onvoltageashighas0.6Vatroomtemperature. Thus,somepeoplestartedtoexploitMOSFETsoperatedin subthresholdregiontogeneratethereferencevoltageindepen- dentofthepowersupplyandtemperature,whilereducethe chipareaandpowerdissipation[4],[5].However,theformer one[4]isfocusedonconstantreferencecurrent.It...
(Berkeley Short-Channel IGFET Model) • Emphasis is on mathematical conditioning for circuit simulation • Short channel models are mostly empirical and shifts the modeling to the parameter extraction capability • Introduced a more detailed subthreshold current model with good continuity • Poor ...
“Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs”, Mathematical and Computer Modelling, Vol. 51, Issues 7-8, April 2010, pp. 901-907. K. Park, P. Nayak, D.K. Schroder, “Role of the substrate during pseudo-MOSFET drain current transients”, Soli...
Based on the numerical solutions of the Poisson equation, the dependences of a number of major doping electrophysical characteristics, such as the potential distribution in the workspace, threshold voltage, and subthreshold current under different technological parameters on the dopant profile, are ...
• In fact, we have very similar forms for gm • Since Vdsat >> Vt, the BJT has larger transconductance for equal current. • Why can't we make Vdsat ~ Vt ? EECS 240 Lecture 2: CMOS - passive devices © 2006 A. M. Niknejad and B. Boser 11 Subthreshold Again… • In ...
此模型亦適用於通道採用後退型摻雜(retrograde doping)的元件.此模型可應用於預測鍺元件考慮量子侷限效應後的subthreshold swing及臨界電壓上升量.由於量子侷限效應會放大摻雜擾動造成的臨界電壓變異,我們進一步建立了此量子侷限效應造成的倍增因數模型.利用此量子模型,我們可以更準確地評估各個參數(如有效氧化層厚度(EOT),...
The stack configuration based on Al/TiN/W has shown bigger ION/IOFF ratios (1x103) with smaller subthreshold slopes (5 mV/decade). Both configuration switches have been ramped for several decades with almost nonfunctional degradation. From the presented Acknowledgments This work was financed by ...
high gate and drain bias, I ON , the threshold voltage, V T , the current taken at zero gate voltage and high drain bias, I OFF , the drain induced barrier lowering, DIBL, and the subthreshold slope, SS, can result in good agreement even with a doping profile far from the reality....
TW449718B2001-08-11Current-mode four quadrant multiplier and two quadrant divider in subthreshold region JPH0554158A1993-03-05 Primary Examiner: NGUYEN, HAI L Attorney, Agent or Firm: OBLON, MCCLELLAND, MAIER & NEUSTADT, L.L.P. (ALEXANDRIA, VIRGINIA, US) ...