“Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs”, Mathematical and Computer Modelling, Vol. 51, Issues 7-8, April 2010, pp. 901-907. K. Park, P. Nayak, D.K. Schroder, “Role of the substrate during pseudo-MOSFET drain current transients”, Soli...
此模型亦適用於通道採用後退型摻雜(retrograde doping)的元件.此模型可應用於預測鍺元件考慮量子侷限效應後的subthreshold swing及臨界電壓上升量.由於量子侷限效應會放大摻雜擾動造成的臨界電壓變異,我們進一步建立了此量子侷限效應造成的倍增因數模型.利用此量子模型,我們可以更準確地評估各個參數(如有效氧化層厚度(EOT),...
Based on the numerical solutions of the Poisson equation, the dependences of a number of major doping electrophysical characteristics, such as the potential distribution in the workspace, threshold voltage, and subthreshold current under different technological parameters on the dopant profile, are ...
For instance, in this study, constraints were tailored to focus on specific performance metrics, but the same method could also be adapted to prioritize other design considerations, such as enforcing the operation of transistors in the subthreshold region rather than saturation. Future research on ...
equation can be rewritten as (2) From the above equation, we know is a positive-tempera- ture coefficient voltage if remains constant but it relies on some circuit technique to achieve. If the MOSFET is in subthreshold region, the relation be- ...
CMOS Scaling
此模型亦適用於通道採用後退型摻雜(retrograde doping)的元件.此模型可應用於預測鍺元件考慮量子侷限效應後的subthreshold swing及臨界電壓上升量.由於量子侷限效應會放大摻雜擾動造成的臨界電壓變異,我們進一步建立了此量子侷限效應造成的倍增因數模型.利用此量子模型,我們可以更準確地評估各個參數(如有效氧化層厚度(EOT),...
Subthreshold Leakage Component Subthreshold Leakage Component Inverter Static Power Consumption Static Power Consumption V i n = 5 V V o u t C L V d d I s t a t P s t a t = P ( I n = 1 ) . V d d . I s t a t • D o m i n a t e s o v e r d y n a ...
Thus the most efficient CMOS circuit will satisfy above equation, and doping, determinative of VTHNand VTHPcan be chosen to accommodate a particular IC process/voltage combination for optimized operation. It should be noted that VTHNand VTHPare computed in the prior art using parameters of the Be...
The subthreshold region assumption that g is proportional to Isn Isp is valid as long as the square-law model of the MOS transistors is valid. The MOS transistors used in this work have channel lengths of at least 1.2 m. Thus the square-law model can be used. This has been veri?ed ...