8.The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region. 讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。 9.A rate equation model is described in this paper for the single mode multiline...
drain current equationgate voltageA new method for measuring the threshold voltage of small geometry MOS devices is presented. Based on the drain current equation in the subthreshold region, the threshold voltage ( V TH), defined as the gate voltage required for a surface band-bending of 2 蠁...
1.This yields a conventional exponential form of the subthreshold current,and the subthreshold swing can be obtained analytically from this current equation.利用正则摄动法求解非线性泊松方程可以得到纳米MOSFETs亚阈值电流和亚阈值摆幅指数依赖外加偏压的解析表达式。 2.The silicon fin\'s size dependence of ...
The main benefit working at this region is that the output current is related exponentially with the input voltage rather than the quadratic relationship to the input voltage in saturation region. This increases the trans-conductance of the MOSFET and so getting higher gain. It is hard to say ...
Since the MOS transistors in the proposed circuit operate in a subthreshold region, the electric power dissipation from the circuit is very small. The low power dissipation is critical for realizing a large scale circuit. In order to examine the influences of device mismatches on the circuit’s ...
The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT ...
Further, the effective natural length λDMQG has been used to calculate center channel potential which in turn used to formulate the ‘virtual cathode’ potential equation of the device. Eventually, the subthreshold current modeling is done using Pao-Sah’s current equation along with the ‘...
s equation, which contains both depletion charge and free charge. The eigenenergies obtained from our model are compared with other two quantum-confinement models, which use flat-well approximation and parabola-well approximation as the potential energy distributions, respectively. And we point out ...
By applying the PDO, acting on an expression for the drain current in the subthreshold region, a new proportional difference characteristic of MOSFET can be obtained. The analytical results show that the proportional difference of the subthreshold equation is a peak function. Its peak position, ...
A third order quasi cubic silicon film potential function in the vertical direction is assumed for FD SOI device,and the surface potential formula is obtained via solving the two dimensional Poisson equation in the subthreshold region.The surface potential model in the deep submicrometer FD device ...