This yields a conventional exponential form of the subthreshold current, and the subthreshold swing can be obtained analytically from this current equation.doi:10.1016/S0038-1101(00)00116-7C.W. LiuT.X. HsiehElsevier LtdSolid State Electronics
Quasi-3D models of subthreshold current and subthreshold swing for Dual-Metal Quadruple-Gate (DMQG) MOSFETs are presented in this paper. Equivalent number of gates (ENGs) concept has been utilized to calculate the effective natural lengthλDMQGof DMQG MOSFETs in spite of solving three-dimensional...
1.This yields a conventional exponential form of the subthreshold current,and the subthreshold swing can be obtained analytically from this current equation.利用正则摄动法求解非线性泊松方程可以得到纳米MOSFETs亚阈值电流和亚阈值摆幅指数依赖外加偏压的解析表达式。 2.The silicon fin\'s size dependence of ...
The iTFET unlike a conventional TFET being a Gated PIN diode, can be a Gated PPN diode or Gated PNN diode, in which the TFET structures are formed by induced region from Schottky Contact, and their dominated current transportation is line tunneling of minority carriers. The line-tunneling inde...
The gradient in the quasi-Fermi energy is responsible for the current flow; thus, both the drift and diffusion components are taken care of in this model. The surface potential model used is obtained by solving a pseudo-2D Poisson’s equation applied within the depletion layer depth along the...
t o g et the fo llow ing equation: 0/R 一 『 —0T— fr= 一【 5 (ro)+ ova(r ) ± R,( ) r0R (r0) To ach iev e fi rst —order temp erature comp ensation current ,R,the ratio ofR1 (t o) /Ro(to) should sari sfy ...
The concept of using negative capacitance is consistent with the Landau-Khalatnikov (L-K) equation. Moreover, the reliability was investigated under DC positive-bias stress, hot-carrier stress and self-heating stress. Results and Discussion According to an ideal Si-based MOSFET, the SS is ...
currentDual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The ...
SOI MOSFETsubthreshold currentquasi-two dimensional equationvelocity overshootSilicon-on-Insulator (SOI) structures are of great interest for future large scale integrated circuits (LSIs) because parasitic capacitances in devices are reduced. The reduced device capacitances in SOI devices promise a higher...
Parabolic potential approximation has been used to obtain the channel potential of the device by solving the two dimensional Poisson's equation. The diffusion current equation is then utilized to model the subthreshold current of the device. The effect of volume inversion in the relatively low-doped...