MOSFETPoisson equationsemiconductor device modelssurface potential100 nmanalytical subthreshold surface potential modelboundary condition YS Pang,JR Brews - 《IEEE Transactions on Electron Devices》 被引量: 49发表: 2003年 Leakage Power Dependent Temperature Estimation to Predict Thermal Runaway in FinFET Cir...
This yields a conventional exponential form of the subthreshold current, and the subthreshold swing can be obtained analytically from this current equation.doi:10.1016/S0038-1101(00)00116-7C.W. LiuT.X. HsiehElsevier LtdSolid State Electronics...
8.The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region. 讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。 9.A rate equation model is described in this paper for the single mode multiline...
Simple expressions of threshold and subthreshold characteristics for a very small buried-channel MOSFET is derived from a model of majority-carrier distribution along the channel. The carrier distribution is determined from the Poisson equation for a high-low junction. The basic formula for the subthre...
1.This yields a conventional exponential form of the subthreshold current,and the subthreshold swing can be obtained analytically from this current equation.利用正则摄动法求解非线性泊松方程可以得到纳米MOSFETs亚阈值电流和亚阈值摆幅指数依赖外加偏压的解析表达式。 2.The silicon fin\'s size dependence of ...
The concept of using negative capacitance is consistent with the Landau-Khalatnikov (L-K) equation. Moreover, the reliability was investigated under DC positive-bias stress, hot-carrier stress and self-heating stress. Results and Discussion According to an ideal Si-based MOSFET, the SS is ...
Further, the effective natural length λDMQG has been used to calculate center channel potential which in turn used to formulate the ‘virtual cathode’ potential equation of the device. Eventually, the subthreshold current modeling is done using Pao-Sah’s current equation along with the ‘...
s equation, which contains both depletion charge and free charge. The eigenenergies obtained from our model are compared with other two quantum-confinement models, which use flat-well approximation and parabola-well approximation as the potential energy distributions, respectively. And we point out ...
surrounding gate (SG MOSFET)We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The ...
SOI MOSFETsubthreshold currentquasi-two dimensional equationvelocity overshootSilicon-on-Insulator (SOI) structures are of great interest for future large scale integrated circuits (LSIs) because parasitic capacitances in devices are reduced. The reduced device capacitances in SOI devices promise a higher...