moss-burstein effect基本解释 莫斯-布尔斯坦效应 分词解释 effect影响 猜你喜欢 kate moss凯特 摩丝 side effects(药物的)副作用 adobe after effectsadobe 后期动画合成软件 mass effect质感效应 after effect后效 special effects(电影或电视节目的)特技效果 cost effectively以最低成本地有效地完成某项任务或达成某...
Johnson effect(热噪效应) 约翰逊效应 heavy armo(u)r school (坦克设计方面的) 重装甲学派 heavy firepower school (坦克设计方面的) 强火力学派 inch strength(帘布层的) 英寸强度 Luders lines (吕德斯线) 滑动迹线 Laplace (拉普拉斯) 拉氏 yarding (新疆罗布草原) 白龙堆 ...
MOSS-BURSTEIN EFFECT (Expt. B1O) The Moss-Burstein effect results from the Pauli Exclusion Principle and is seen in semiconductors as a shift with increasing doping of the band-gap as defined as the separation in energy between the top of the valence band and the unoccupied energy states in...
注册 待分类 > 待分类 > Moss-Burstein effect 莫斯-布尔斯坦效应 下载文档 收藏 打印 转格式 1273阅读文档大小:1.43M7页pmnwan上传于2010-01-18格式:RTF 人工智能基础(第2版) x2d;高济 x2d;ai x2d;4 x2d;本 热度: 计算机知识windows系统:开始--运行--命令大全0421050529第一期 ...
Moss-Burstein effect 莫斯-布尔斯坦效应 MOSS-BURSTEINEFFECT(Expt.B1O)TheMoss-BursteineffectresultsfromthePauliExclusionPrincipleandisseeninsemiconductorsasashiftwithincreasingdopingoftheband-gapasdefinedastheseparationinenergybetweenthetopofthevalencebandandtheunoccupiedenergystatesintheconductionband.Theshiftarises...
Moss-Burstein effect 莫斯-布尔斯坦效应.pdf,MOSS-BURSTEIN EFFECT (Expt. B1O) The Moss-Burstein effect results from the Pauli Exclusion Principle and is seen in semiconductors as a shift wit increasing doping of the band-gap as defined as the separation in
1)Moss-Burstein effectMoss-Burstein效应 1.The major factors are as follow:Moss-Burstein effect,deep level trapping phenomenon and N∶In stoichiometry etc.影响InN材料带隙的主要因素有Moss-Burstein效应、深能级俘获现象以及N∶In化学计量比等,得出在不同质量样品和不同生长条件下,3种因素均影响InN材料的带...
Using photoluminescence spectra based asymmetric ratio based analysis, it is observed that the increase in symmetry around the Eu 3+ ion is concomitant with the increase in overall point-defect density (which in turn results in M-B effect). There is an increase in PL intensity with calcination...
该效应称之为Burstein Moss effect（莫斯-布尔斯坦效应），也称之为蓝移效应。其常用于荧光光谱的解释中。n型半导体材料波长移动计算公式：ΔEBM=[1+（m*e）/(m*h)][(3/π)2/3(h2)/(8m*e)n2/3-4KT]式中：h 普朗克常量；K，玻尔兹曼常数；T，绝度温度；n，导带电子浓度；m*e，m*h分别为电子和...