Moss-Burstein效应,Moss-Burstein... ... ) Burstein-Moss effect 效应 ) Burstein-Moss shift 移动 ) Moss relation 定则 ... www.dictall.com|基于7个网页 2. 偏移 ...学吸收波长往高能量区域移动, 这个现象称为 BM 偏移 (Burstein-Moss shift),为透明导电薄膜随著电性变化,薄膜 在可见光 …www.itrc...
Burstein-Moss shift of n-doped In0.53Ga0.47As/InP - art. no. 233302 We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In0.53Ga0.47As (1.3 x10(16)less than or equal ton less than or equal to3.9x10(19)cm(-3)) lattice matched to InP using spectral ...
In this work a detailed analysis of the quantum efficiency of InSb n +- p photodetectors produced by liquid phase epitaxy is given, in the case when the n + region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically det...
We investigated the simultaneous effect of strain and the Burstein–Moss (BM) energy shift on the optical properties of InN films using Raman and photoluminescence spectroscopy. The existence of compressive strain in all films is revealed by Raman spectroscopic analysis and is...
Here, we propose that the Burstein鈥揗oss (BM) effect, which could widen the optical gap by carrier density, could be a potential mechanism to realize the multicolor tunable EC phenomenon. Degenerated semiconductors with suitable fundament band gaps and effective carrier masses could be potential ...
Here, we propose that the Burstein–Moss (BM) effect, which could widen the optical gap by carrier density, could be a potential mechanism to realize the multicolor tunable EC phenomenon. Degenerated semiconductors with suitable fundament band gaps and effective carrier masses could be potential ...