... ) Burstein-Moss effect 效应 ) Burstein-Moss shift 移动 ) Moss relation 定则 ... www.dictall.com|基于7个网页 2. 偏移 ...学吸收波长往高能量区域移动, 这个现象称为 BM 偏移 (Burstein-Moss shift),为透明导电薄膜随著电性变化,薄膜 在可见光 …www.itrc.narl.org.tw|基于3个网页 3. ...
A large blue shift of the band gap of InN (1.2 eV) is observed as a collective result of compressive strain in films as well as a BM shift. The carrier density is calculated using the BM shift in the photoluminescence spectra. Finally, a blue shift in the band...
We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In0.53Ga0.47As (1.3 x10(16)less than or equal ton less than or equal to3.9x10(19)cm(-3)) lattice matched to InP using spectral ellipsometry in the range of 0.4... ...
BM Nguyen,D Hoffman,Y Wei,... - 《Applied Physics Letters》 被引量: 164发表: 2007年 Monolithic integration of a semiconductor optical amplifier and a high bandwidth p-i-n photodiode using asymmetric twin-waveguide technology An optical mode transformer, semiconductor optical amplifier, and wavegui...
Here, we propose that the Burstein鈥揗oss (BM) effect, which could widen the optical gap by carrier density, could be a potential mechanism to realize the multicolor tunable EC phenomenon. Degenerated semiconductors with suitable fundament band gaps and effective carrier masses could be potential ...
The tunable optical band gap in the visible range could change the color if the BM shift is large enough. In some TCOs, the BM shift can up to 0.8 eV [24]. However, TCOs do not show the color change because of their large fundamental band gaps. If a semiconductor possesses a ...