... ) Burstein-Moss effect 效应 ) Burstein-Moss shift 移动 ) Moss relation 定则 ... www.dictall.com|基于7个网页 2. 偏移 ...学吸收波长往高能量区域移动, 这个现象称为 BM 偏移 (Burstein-Moss shift),为透明导电薄膜随著电性变化,薄膜 在可见光 …www.itrc.narl.org.tw|基于3个网页 3. ...
We have evaluated the Burstein-Moss (BM) shift at 300 K in seven samples of n-In0.53Ga0.47As (1.3 x10(16)less than or equal ton less than or equal to3.9x10(19)cm(-3)) lattice matched to InP using spectral ellipsometry in the range of 0.4... ...
In this work a detailed analysis of the quantum efficiency of InSb n +- p photodetectors produced by liquid phase epitaxy is given, in the case when the n + region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically det...
The carrier density is calculated using the BM shift in the photoluminescence spectra. Finally, a blue shift in the band edge emission is observed further because of the presence of compressive strain in the films along with the BM effect....
Here, we propose that the Burstein鈥揗oss (BM) effect, which could widen the optical gap by carrier density, could be a potential mechanism to realize the multicolor tunable EC phenomenon. Degenerated semiconductors with suitable fundament band gaps and effective carrier masses could be potential ...
Until now, there has been no report regarding the multicolor tunable EC materials based on the BM effect. We believe it is due to the rarity the materials which can satisfy these four requirements. Being aware of possibility of the BM effect in realizing the multicolor tunable EC phenomenon, ...