moss-burstein effect基本解释 莫斯-布尔斯坦效应 分词解释 effect影响 猜你喜欢 kate moss凯特 摩丝 side effects(药物的)副作用 adobe after effectsadobe 后期动画合成软件 mass effect质感效应 after effect后效 special effects(电影或电视节目的)特技效果 cost effectively以最低成本地有效地完成某项任务或达成某...
Moss-Burstein effect 莫斯-布尔斯坦效应相关短语 fighting compartment (坦克的) 战斗室 intermediate position (坦克部队的) 中间阵地 steering brake lever (坦克) 转向制动杆 Johnson effect(热噪效应) 约翰逊效应 heavy armo(u)r school (坦克设计方面的) 重装甲学派 heavy firepower school (坦克设计方面的) 强...
MOSS-BURSTEIN EFFECT (Expt. B1O) The Moss-Burstein effect results from the Pauli Exclusion Principle and is seen in semiconductors as a shift with increasing doping of the band-gap as defined as the separation in energy between the top of the valence band and the unoccupied energy states in...
Moss-Burstein effect 莫斯-布尔斯坦效应 下载文档 收藏 打印 转格式 1273阅读文档大小:1.43M7页pmnwan上传于2010-01-18格式:RTF 人工智能基础(第2版) x2d;高济 x2d;ai x2d;4 x2d;本 热度: 计算机知识windows系统:开始--运行--命令大全0421050529第一期 ...
Moss-Burstein effect 莫斯-布尔斯坦效应 MOSS-BURSTEINEFFECT(Expt.B1O)TheMoss-BursteineffectresultsfromthePauliExclusionPrincipleandisseeninsemiconductorsasashiftwithincreasingdopingoftheband-gapasdefinedastheseparationinenergybetweenthetopofthevalencebandandtheunoccupiedenergystatesintheconductionband.Theshiftarises...
Moss-Burstein effect 莫斯-布尔斯坦效应.pdf,MOSS-BURSTEIN EFFECT (Expt. B1O) The Moss-Burstein effect results from the Pauli Exclusion Principle and is seen in semiconductors as a shift wit increasing doping of the band-gap as defined as the separation in
1)Moss-Burstein effectMoss-Burstein效应 1.The major factors are as follow:Moss-Burstein effect,deep level trapping phenomenon and N∶In stoichiometry etc.影响InN材料带隙的主要因素有Moss-Burstein效应、深能级俘获现象以及N∶In化学计量比等,得出在不同质量样品和不同生长条件下,3种因素均影响InN材料的带...
Interestingly calcination of this material results in an increase in optical band gap (螖Eg=0.12eV), strongly suggesting defect-induced Moss-Burstein (M-B) effect in as-synthesized sample. It is noteworthy that, this is the first report demonstrating defect induced M-B effect in microwave ...
莫斯-布尔斯坦效应（moss-burstein effect）是由泡利不相容原理引起的，当在半导体中掺杂增加时，其带隙改变，价带顶和导带中未占据能态发生分离。n型重掺杂时由于费米能级在导带中而使带隙改变加大（p型时在价带中），由于载子浓度过高，在导带已经有一些电子填入时，使电子从价带跃迁至导带则需要更多的能量，满带...