兩個是等電位,基體是 N,d 極是 P, 所以body diode 方向 由 d 到 s。 N channel depletion MOSFET 的 S 和 基體接在一起, 兩個是等電位,基體是 P,d 極是 N, 所以body diode 方向 由 s 到 d。 Reference https://electronics.stackexchange.com/questions/69311/mosfet-symbol-what-is-the-correct-s...
(Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID...
MOSFET – P-Channel 100 V FQD8P10TM-F085 Description These P−Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior ...
参数 Parameters 符号Symbol 数值 Value 单位Unit 漏源电压Drain-Source Voltage VDS -30 V 栅源电压Gate-Source Voltage VGS ±20 V 漏极连续电流Continuous Drain Current ID -4 A 漏极脉冲电流Pulsed Drain Current (note 1) 最大功耗Maximum Power Dissipation IDM -16 A PD 1.25 W 结环热阻Thermal ...
P-Channel 40 V (D-S) MOSFET SiA441DJ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.047 at VGS = - 10 V - 40 0.065 at VGS = - 4.5 V PowerPAK SC-70-6L-Single D 6 D 5 2.05 mm S 4 1 D 2 D 3 G S 2.05 mm ID (A) - 12a - 12a Qg (Typ.) 11 nC S G...
P-Channel ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Min Typ Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250µA Gate-Body Leakage Current IGSS VGS=±10V,...
STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET™ Power MOSFET General features Type STS5PF30L VDSS 30V RDS(on) <0.055Ω ID 5A ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface mount assembly ...
STL62P3LLH6 P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL62P3LLH6 VDS -30 V RDS(on) max 10.5 mΩ ID -62 A Very low on-resistance ...
NTND31211PZ MOSFET – Dual, P-Channel, Small Signal, XLLGAS6, 0.65mm x 0.90mm x 0.4mm -20 V, -127 mA Features • Dual P−Channel MOSFET • Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm × 0.90 mm Package • These Devices are Pb−Free, Halogen Free/BFR ...
P-ChannelMOSFET ABSOLUTEMAXIMUMRATINGS(T A =25°C,unlessotherwisenoted) PARAMETERSYMBOL5sSTEADYSTATEUNIT Drain-SourceVoltageV DS -30 V Gate-SourceVoltageV GS ±12 ContinuousDrainCurrent(T J =150°C) a T A =25°C I D -6.3-4.6 A T A =70°C-5.1-3.7 PulsedDrainCurrentI DM -25 Continuou...