Can change any of the semiconductor wafer process technology to monitor add-doped layer in the horizontal direction of the steepness of the distribution, as another additional step of wafer process technology. 在具体实施例之一中,包括一个或多个掺添区之取样结构系形成在一制造晶片(例如,同时和一个或...
A lateral diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof are provided. A deep well region is disposed in a substrate. An isolation structure is disposed in the substrate to define a first active area and a second active area. A well region is disposed ...
Medical Financial Encyclopedia lat·er·al (lăt′ər-əl) adj. 1.Of, relating to, or situated at or on the side. 2.Of or constituting a change within an organization or hierarchy to a position at a similar level, as in salary or responsibility, to the one being left:made a l...
Optical properties in titanium‐diffused LiNbO3 strip waveguides A diffusion condition for making a low‐loss waveguide is presented, although suppression of lateral diffusion is necessary to achieve further insertion‐loss... M Fukuma,J Noda,H Iwasaki - 《Journal of Applied Physics》 被引量: 274...
enhanced diffusion-drift equationLDMOS deviceA new device,dual material gate(DMG)lateral double diffused metal oxide semiconductor(LDMOS)was presented,which ... HU Yuan,YH Dai,JN Chen,... - 《Journal of University of Science & Technology of China》 被引量: 1发表: 2007年 加载更多研究...
The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the substrate, neighboring with a first side...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以形成具有高壓功能的積體電路(High Voltage Integrated Circuits, HVIC)和智能電源管理積體電路(Smart Power Management Integrated Circuits, SPMIC),故已逐漸...
The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a ...
LATERAL DOUBLE-DIFFUSED MOS TRANSISTOR, ITS MANUFA 优质文献 相似文献A Monolithic Video A/D Converter The design and measured performance of a fully parallel monolithic 8-bit A/D converter is reported. The required comparators and combining logic were desig... ...
Consider, for example, the extreme case where lateral diffusion has completely eliminated the spaces between the diffused regions (wa=0). In this case, component 18 is zero. In the opposite case of zero lateral diffusion, component 18 is a maximum. Thus, component 18 will vary monotonically ...