We investigated a temperature dependence of area component of leakage current for pn junctions fabricated on CZ-Si wafers with different thermal history. To separate area component from the total leakage current gate-controlled pn junction diodes with wide range of perimeter-to-area ratios were ...
Temperature dependence of the device constant (n) of junction Mode is experimentally measured. It has been found that it varies linearly with temperature. Experiment has been performed on different types of LEDs and a low leakage silicon diode. It has been shown that the percentage difference in...
Temperature dependence of the device constant (n) of junction Mode is experimentally measured. It has been found that it varies linearly with temperature. Experiment has been performed on different types of LEDs and a low leakage silicon diode. It has been shown that the percentage difference in...
leakage current, while [22,23] also investigate the monitoring of solder layer degradation in multi-chip IGBT modules based on combined TSEPs. However, most of the existing achievements focus on the degradation of a single type of device, and it is impossible to comprehensively evaluate the over...
(SC)) in dual-junction GalnP/GaAs solar cells have been investigated, and the experimental results show that the photo current of GalnP top cell is higher than that of GaAs bottom cell and the I_(SC) of the device is usually not limited by GaAs bottom cell if a leakage current occurs...
This model captures not only the tunneling electron pairs but also the leakage currents through the insulating barrier at the interfaces. The total current then comprises two components: one is the normal supercurrent I0 adjustable by applied DC bias V0 while the other is the time-dependent ...
The n-Mg xZn 1 xO/ p-GaN diode at a substrate temperature of 25 °C had the lowest leakage current in reverse bias. However, the leakage current of the diodes increased with an increase in annealing temperatures. The temperature sensitivity coefficients of the I– V characterizations were ...
14(D)), a potential barrier will be formed which stops the flow of carriers from the semiconductor side to the metal side, and the current will be just the leakage, reverse current I0. Sign in to download full-size image Fig. 14. Energy band diagram of a metal–semiconductor junction ...
4e,f. Because such a conduction channel could give a sudden resistance leakage at the TPNJ leading to a low-resistant state owing to the large change in density of states of the bulk parabolic band, the surface accumulation layer could switch off the high-resistance state of TPNJ to a ...
In the reverse bias region, the device has leakage currents under the detection limit of the measurement system. This implies the fabrication of a defect-free interface between the p-type and n+-type diamonds. Cross-sectional transmission electron microscopy (TEM) analysis was carried out to ...