We first characterize n +/p and p +/n diodes to quantify how changes in doping profiles affect reverse bias leakage. Diodes with end-of-range (EOR) silicon defects intentionally located in the junction depletion region are also characterized to quantify their contribution. This feeds into a ...
Thus, end-of-range defects are located in a region below and spaced apart from the junctions, and the defects are not located in the activated source/drain regions. Junction leakage as a result of the end-of-range defects is thereby reduced. 展开 ...
This region, called the depletion layer, behaves as an insulator. The most important characteristic of p-n junctions is that they rectify. Part A of the figure shows the current-voltage characteristics of a typical silicon p-n junction. When a forward bias is applied to the p-n junction (...
Upon arrival at this junction the electrons are pulled across the depletion region and draw into the collector. These electrons flow through the collector region and out the collector contact. Because electrons are negative carriers, their motion constitutes positive current flowing into the external ...
A depletion region is formed within the channel along the pn junction boundary. The gate, located on the channel and separated from the source and the drain, is heavily doped with dopants of a second conductivity type, which is the opposite type of the first conductivity type, at a peak ...
This action results in a larger depletion region and an increased channel resistance between drain and source. As vDS is further increased, a point is reached where the depletion region cuts off the entire channel at the drain edge and the drain current reaches its saturation point. If...
leakage current, while [22,23] also investigate the monitoring of solder layer degradation in multi-chip IGBT modules based on combined TSEPs. However, most of the existing achievements focus on the degradation of a single type of device, and it is impossible to comprehensively evaluate the ...
摘要: PURPOSE: To provide a method of manufacturing a junction-type field effect transistor where a leakage current is stopped from occurring, and a side gate effect can be restrained.收藏 引用 批量引用 报错 分享 文库来源 求助全文 JUNCTION-TYPE FIELD EFFECT TRANSISTOR AND ITS MANU 优质文献 ...
This can give rise to a depletion region at the interface as in the p–n junction case. The metal acts similarly to very heavily doped semiconductor material from the point of view of its effects on the electrostatic properties of the depletion layer. These M–S contacts (Fig. 11) are ...
In the reverse bias region, the device has leakage currents under the detection limit of the measurement system. This implies the fabrication of a defect-free interface between the p-type and n+-type diamonds. Cross-sectional transmission electron microscopy (TEM) analysis was carried out to ...