We first characterize n +/p and p +/n diodes to quantify how changes in doping profiles affect reverse bias leakage. Diodes with end-of-range (EOR) silicon defects intentionally located in the junction depletion region are also characterized to quantify their contribution. This feeds into a ...
Arrhenius plots of their leakage (log Ir/T3 vs 1/T) yield an activation energy equal to the silicon band gap (1.1 eV), which is characteristic for carrier diffusion to the junction rather than the generation of leakage currents via defect states within the depletion region. Sign in to ...
leakage currents < 1μA and RONbetween 200 and 400 Ω. Owing to the large series resistance, the ideality factor is obtained using Shockley equation in the sub-threshold region only (Table1). High values of 3.77 reducing to 2.0 at 475 K suggests thermal activation is occurring as resistance...
The majority carriers (holes) in the p+-emitter are injected (or emitted) into the base region. The base-collector n-p junction is reverse-biased. It has high resistance, and only a small leakage current will flow across the junction. If the base width is sufficiently narrow, however, ...
Consequently, there is a field barrier, the built-in field to electro-hole motion and there is a region where no free electrons or free holes exist. This region of depleted free carriers is the depletion region, which contains only the fixed charge. Outside the depletion region, the total ...
region and the source/drain regions195is decreased due to shrinkage of channel thickness, leakage current of the source/drain regions195can be reduced. Accordingly, refresh characteristics of the device can be improved. In addition, a complete depletion region is formed because of the thin vertical...
由于载流子的扩散,N 区附近会留下正电荷(施主离子),P 区附近会留下负电荷(受主离子),形成空间电荷区(depletion region)。该区域内产生一个内建电场(built-in electric field),阻止进一步的载流子扩散。 3. 二极管的工作原理(Diode Working Principle)二极管是一种单向导电器件,其工作模式取决于外加电压的方向: (...
The increase in the bulk leakage current has been related to an increase in the diffusion current at low fluxes and to generation current from an EV + 0.386 eV center in the depletion region at high fluxes.doi:10.1080/00337577308232283
Using this method depletion regions are made to merge with suitable biasing in an intervening layer interposed between the gate and channel of a junction field-effect device and the interaction of the depletion regions is used for isolation and coupling to alter the associated depletion region in ...
In the DMOSFET structure, when the drain is reverse biased, the depletion region between the body and the drift region punches through laterally from both sides and then spreads towards the drain in a substantially one-dimensional manner similar to a plane-parallel junction. In the SJFET ...