PN-JUNCTION DEPLETION LAYER TUNNEL TRANSISTORThe present invention relates to a transistor for controlling breakdown phenomenon occurring in a Zener pn junction diode to a third terminal. A tunneling transistor consists of a semiconductor inlet layer doped with a high concentration of electrons, a ...
In semiconductors, the p-n junction is formed through the diffusion of dopants, ion implantation, or epitaxy. Epitaxy involves growing a crystal-doped layer with one dopant type on top of a crystal-doped layer of another dopant type. Ion implantation or diffusion of one type of impurity into ...
Looking for depletion-layer rectification? Find out information about depletion-layer rectification. Rectification at the junction between dissimilar materials, such as a pn junction or a junction between a metal and a semiconductor. Also known as... Exp
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This space near the junction carrying those positive and negative charges is known as depletion region or depletion layer.Hence, the diffusion of holes and electrons in N-type region and P-type regions to neutralize the both regions of the PN junction is the cause of depletion region formation...
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Modeling of p~+np~+ CMOS Si LED structures show that by utilizing a short linear increasing E-field in the p~+n reverse biased junction with a gradient of approximately 5 × 10~5 V.cm~(-1). μm~(-1) , and facing an forward biased injecting p~+n junction, has the potential to...
This paper describes the performance of the Fully Depleted pn-junction CCD (pn-CCD) system, developed for ESA's XMM-satellite mission for soft x-ray imagin... C.,von,Zanthier,... - 《Experimental Astronomy》 被引量: 2发表: 1998年 Development of an n-channel CCD, CCD-NeXT1, for Soft...
Trench field effect transistor with PN depletion layer barrier A trench gate depletion-type VDMOS device and a method for manufacturing the same are disclosed. The device comprises a drain region; a trench gate includi... BH Floyd,D Pitzer,FI Hsheieh,... 被引量: 0发表: 1996年 加载更多研...
A high-speed carrier-depletion silicon modulator based on a fringe field pn junction design is presented. Due to the strong fringe field, the size of heavily doped regions can be reduced and away from the waveguide core, whereas large modulation efficiency is still accomplishable. The VπL is...