Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures. Kelvin probe force microscope, RTS is ascribed to trapping/detrapping of carriers by/from a single dopant near the farther edge of the depletion region... Purwiyanti,Sri,Nowak,... - 《Applied Phy...
One is based on the Schottky junction theory that explains the interface of a semiconductor to a metal. The other is the description of a one-sided abrupt junction between a moderately doped n-type semiconductor region and a highly doped p-type semiconducting region. For both cases the current...
The wiring 614 extends to an upper side of a channel formation region in the TFT 605 of the amplifier circuit to also serve as the gate electrode 634. The wiring 615 is connected to a drain electrode (also referred to as a drain wiring) or a source electrode (also referred to as a ...
Internalization of gap junction plaques results in the formation of annular gap junction vesicles. The factors that regulate the coordinated internalization of the gap junction plaques to form annular gap junction vesicles, and the subsequent events invo
Internalization of gap junction plaques results in the formation of annular gap junction vesicles. The factors that regulate the coordinated internalization of the gap junction plaques to form annular gap junction vesicles, and the subsequent events invo
The thyristor has a blocking PN junction having a depletion region extending into the field-containing layer. The thickness of the field-containing region is greater than the depletion layer width in the field-containing layer under device forward blocking conditions. In the case of the curved PN...
The photosensitive element of a CMOS imager pixel is typically either a depleted p-n junction photodiode or a field induced depletion region beneath a photogate. CMOS imaging circuits of the type discussed above are generally known and discussed in, for example, Nixon et al., “256×256 ...
The enlargement of the boxed region shows the individual distribution of INF2 and MAL2 at the apical zone in a single x-y plane (middle panels) and the merged image (bottom left panel). Pixels where INF2 and MAL2 colocalize are depicted in a false-color image obtained by intensity ...
Since a P-N junction is used in the polycrystalline floating gate 13, the memory cell can be prevented from shifting to depletion. An erase threshold voltage Vr of a dense distribution can be generated to obtain overerasing characteristics. Since there is less movement of electrons through a ...
The thyristor has a blocking PN junction having a depletion region extending into the field-containing layer. The thickness of the field-containing region is greater than the depletion layer width in the field-containing layer under device forward blocking conditions. In the case of the curved PN...