Describes the existence of transient components in pn junction leakage current formed in Czochralski silicon wafers. Measurement of area and time dependence of leakage current; Absence of transient components in epitaxial and float-zone Czochralski wafers with low oxygen content; Cause for oxygen-related...
With proper selection of the oxidation temperature and especially with introduction of TCA 111 into the oxidizing atmosphere, it is possible to suppress the growth of OSF and reduce the leakage current in PN junctions关键词: leakage currents oxidation p-n junctions TCA 111 diode reversal I-V ...
1. Reverse-Bias pn Junction Leakage Current The drain/source and substrate junctions in a MOS transistor are reverse biased during transistor operation. This results in reverse-biased leakage current in the device. This leakage current can be due to drift/diffusion of minority carriers in the reve...
lustrated in Fig. 3. is the reverse-bias pn junction leakage; is the subthreshold leakage; is the oxide tunneling cur- rent; is the gate current due to hot-carrier injection; is the GIDL; and is the channel punchthrough current. Cur- ...
aPN junction with unidirectional conductivity, when semiconductor devices work in the reverse bias leakage current state, there will be little PN连接点以单向的传导性,当半导体装置在反偏压漏出现状运转,那里将是一点 [translate] 英语翻译 日语翻译 韩语翻译 德语翻译 法语翻译 俄语翻译 阿拉伯语翻译 西班牙语...
3. is the reverse-bias pn junction leakage; is the subthreshold leakage; is the oxide tunneling cur- rent; is the gate current due to hot-carrier injection; is the GIDL; and is the channel punchthrough current. Cur- rents , , and are off-state leakage mechanisms, while and occur in ...
Alternatively, a metal layer may be used in place of the second semiconductor to form a Schottky-barrier junction with the channel semiconductor layer instead of a PN junction. Preferably, the channel semiconductor layer and the second semiconductor layer or the metal layer are sequentially ...
In the SIMS boron profile after the final annealing no clustering peak at the amorphous/crystalline interface can be found (Fig. 5). It is Conclusion The electrical characteristic of shallow p+n-junction is studied. The source/drain diode leakage current can be modeled by trap assisted ...
Hello everyone, I am Rose. Welcome to the new post today. This article describes 6 causes of MOSFET leakage current...
However, it is observed in the structure shown inFIG. 62that the pn junction J1positioned under the partial isolator40results in occurrence of an abnormal leakage current at the pn junction J1. SUMMARY OF THE INVENTION According to a first aspect of the present invention, a semiconductor device...