Describes the existence of transient components in pn junction leakage current formed in Czochralski silicon wafers. Measurement of area and time dependence of leakage current; Absence of transient components in epitaxial and float-zone Czochralski wafers with low oxygen content; Cause for oxygen-related...
After junction irradiation, the reverse recovery time decreases more than order of magnitude but the reverse current increase is not more than twice near room temperature. The behavior of such junctions from room temperature up to 320°C reveals that present-day manufactured fast recovery junctions,...
Considerable progress has been achieved recently to enhance the thermal neutron detection efficiency of solid-state neutron detectors that incorporate neutron sensitive materials such as ~(10)B and ~6LiF in Si micro-structured p-n junction diode. Here, we describe the design, fabrication process opt...
1. Reverse Biased pn Junction Leakage Current During transistor operation, MOS transistor s' drain/source and substrate junctions are reverse biased. As a result, the device's leakage current is reverse biased. This leakage current could be caused by minority carrier drift/diffusion in the reverse...
1. Reverse-Bias pn Junction Leakage Current The drain/source and substrate junctions in a MOS transistor are reverse biased during transistor operation. This results in reverse-biased leakage current in the device. This leakage current can be due to drift/diffusion of minority carriers in the reve...
aPN junction with unidirectional conductivity, when semiconductor devices work in the reverse bias leakage current state, there will be little PN连接点以单向的传导性,当半导体装置在反偏压漏出现状运转,那里将是一点[translate]
In conventional self-aligned nickel (Ni) silicide (SALICIDE) process, Ni silicidation is usually carried out by using tungsten-halogen lamp annealing and pn junction leakage current increases with the miniaturization of junction area and depth. The junction leakage is closely related to Ni-silicide...
Since the diffusion potential of the SBD is lower than that of the pn junction diode, current begins flowing across the SBD at a lower voltage than in the case of the pn junction diode. SBDs tend to exhibit higher leakage current since their crystal structure tends to b...
lustrated in Fig. 3. is the reverse-bias pn junction leakage; is the subthreshold leakage; is the oxide tunneling cur- rent; is the gate current due to hot-carrier injection; is the GIDL; and is the channel punchthrough current. Cur- ...
The leakage current in the dark and the photocurrent in zinc diffused GaAs diodes have been measured at room temperature in air, and the results have been explained qualitatively in terms of the channel effect. The theory of channel leakage current developed previonsly for Ge diodes has been sli...