MOS transistorinstabilitiesoxide chargeinterface trapsgamma-radiationhigh-electric field stressAn up-to-date review of results in the field of instabilities in MOS transistors is presented in this paper. First, the existing knowledge about the origin and features of gate oxide charge and interface ...
Bias-Temperature Instabilities in Silicon Carbide MOS Devices We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative b... ...
The Mechanisms of Small Instabilities in Irradiated MOS Transistors The effect is distinct from ionic instabilities. Even small radiation-induced drift effects may be of importance in precision devices such as MOS comparators... A Holmes-Siedle,L Adams - 《IEEE Transactions on Nuclear Science》 被引...
Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In particular, charge trapping has long been made responsible for random telegraph and 1/f noise. Recently, it has been identified as a significant contributor to bias temperature instabilities. Conventional defect...
Threshold voltage instabilities in mos transistors with advanced gate dielectrics shen chenTHRESHOLD VOLTAGE INSTABILITIES IN MOS TRANSISTORS WITH ADVANCED GATE DIELECTRICSSubmitted
We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative bias, when the surface is accumulated. Devices stressed with the ...
Interface and oxide trap charge both tend to be positive in pMOS transistors, so that each reinforces the electrostatic effects of the other. In nMOS transistors, on the other hand, interface and oxide trap charges tend to have offsetting effects on MOS transistor threshold voltage. The ...
We present a brief overview of NBT stress-induced threshold voltage instabilities in p-channel vertical double-diffused MOS field-effect transistors (VDMOSFETs). NBT stress-induced threshold voltage shifts are fitted using different models to estimate the device lifetime and to discuss the impacts ...
The authors analyse the drifts with time of the characteristics of MOS transistors whose silica layers are free of mobile ions. It is shown that these drifts are due to two independent phenomena. One of these phenomena, called 'linear behavior' is studied in this first part. Its different ...
MOS device instabilitiesdeep level defectselectron paramagnetic resonance/ B2560R Insulated gate field effect transistors B0170N ReliabilityThe physical and chemical nature of several defects involved in metal–oxide–silicon (MOS) device instabilities have become fairly well understood through studies ...