MOS transistorinstabilitiesoxide chargeinterface trapsgamma-radiationhigh-electric field stressAn up-to-date review of results in the field of instabilities in MOS transistors is presented in this paper. First, the existing knowledge about the origin and features of gate oxide charge and interface ...
Bias-Temperature Instabilities in Silicon Carbide MOS Devices We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative b... ...
Chapter 6 Charge pumping techniques: Their use for diagnosis and interface states studies in MOS transistors J.L. Autran, B. Balland, G. Barbottin Pages 405-493 select article Chapter 7 The study of thermal nitridation and reoxidation mechanisms using isotopic tracing methods ...
Threshold voltage instabilities in mos transistors with advanced gate dielectrics shen chenTHRESHOLD VOLTAGE INSTABILITIES IN MOS TRANSISTORS WITH ADVANCED GATE DIELECTRICSSubmitted
We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative bias, when the surface is accumulated. Devices stressed with the ...
Interface and oxide trap charge both tend to be positive in pMOS transistors, so that each reinforces the electrostatic effects of the other. In nMOS transistors, on the other hand, interface and oxide trap charges tend to have offsetting effects on MOS transistor threshold voltage. The ...
We present a brief overview of NBT stress-induced threshold voltage instabilities in p-channel vertical double-diffused MOS field-effect transistors (VDMOSFETs). NBT stress-induced threshold voltage shifts are fitted using different models to estimate the device lifetime and to discuss the impacts ...
The authors analyse the drifts with time of the characteristics of MOS transistors whose silica layers are free of mobile ions. It is shown that these drifts are due to two independent phenomena. One of these phenomena, called 'linear behavior' is studied in this first part. Its different ...
A phenomenon leading to locally distorted breakdown characteristics of MOS power transistors in the range of 0.1 to 1 mA, e.g. very far away from real operating conditions, has been observed. The characteristics might have suggested a reduced second breakdown of the parasitic bipolar transistor, ...
Our results therefore suggest that normally-off AlGaN/GaN MOS heterostructure field-effect transistors featuring high density of negative Q(int) can be expected to be more susceptible for threshold voltage instabilities compared to normally-on counterparts....