Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineeringZheng Dongqi
量穩定,而被廣為使用的高介電陶瓷材料, 其 〈3 〉偶極極化或方向極化(dipole polarization DK值約為 3000~8000 ;但是BaTiO 脆性高, or orientation polarization) :具有永久偶極矩的 3 加㆖在後段製程㆖需要高溫燒結,所以與有機 分子,會順著平行電場的方向排列。 基板製程不相容。通常必須改用BaTiO3 陶瓷 ...
We discuss anomalous V_(TH) in poly-Si/high-k gate stacks and in metal/high-k systems. The possible origin for anomalous behavior is also discussed, focusing on the dipole formation difference between the top and bottom interfaces.会议名称: Physics and Technology of High-k Gate Dielectrics 7...
The permittivity of the film was increased due to the dipole enhancement, which was supported from the frequency-dependent capacitance-voltage and the conductance-voltage measurements change. The ruthenium modified ZrHfO film has a leakage current density 5 orders of magnitude lower than that of the...
Figure 4b shows that silicon disk supports dipole Mie resonance (see also Supplementary Fig. 4 for disk cross sections). In reciprocal space (Fig. 4d) we can see how the electric field localization provides an extra momentum that is required for high-k magnon detection. The modeled BLS ...
Usually, the external voltage applied to the dielectric capacitor could cause the negative/positive dipole layer whose positive charges locate near the cathode, whereas the negative charges place beneath the anode, which is out of the observation field. In addition, tunnelling current inducing ...
Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacks Combining two different electrical characterisation methods on the same MOS capacitors, we demonstrate that the flat band voltage of High-κ metal gate sta... M Charbonnier,C Leroux,V Cosnier,... - 《Microelectronic ...
The authors presented a convincing theory that the nano-dipole behavior of Mn3O4 under an applied electric field resulted in obtaining a high dielectric constant. This is due to the increasing dipole moment of nano-sized Mn3O4 particles per unit volume [117]. In addition, similar dielectric ...
The permanent electric dipole moments of CaOH and SrOH in theirX2Σ+,A2Π3/2,A2Π1/2, andB2Σ+states have been measured using the technique of supersonic m... TC Steimle,DA Fletcher,KY Jung,... - 《Journal of Chemical Physics》 被引量: 93发表: 1992年 LASER AND FOURIER-TRANSFORM...
DEA material enhancement with dipole grafted PDMS networks. In Proceedings of the Conference on Electroactive Polymer Actuators Devices, San Diego, CA, USA, 8–9 March 2011. 64. Diaz, R.; Diani, J.; Gilormini, P. Physical interpretation of the Mullins softening in a carbon-black filled ...