Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineeringZheng Dongqi
An interface dipole model explaining threshold voltage(Vt)tuning in HfSiON gatedn-channel field effect transistors(nFETs)is proposed.Vttuning depends on rare earth (RE) type and diffusion inSi∕SiOx∕HfSiON∕REOx/metal gatednFETsas follows:Sr<Er<Sc+Er<La<Sc<none. ThisVtordering is very simi...
量穩定,而被廣為使用的高介電陶瓷材料, 其 〈3 〉偶極極化或方向極化(dipole polarization DK值約為 3000~8000 ;但是BaTiO 脆性高, or orientation polarization) :具有永久偶極矩的 3 加㆖在後段製程㆖需要高溫燒結,所以與有機 分子,會順著平行電場的方向排列。 基板製程不相容。通常必須改用BaTiO3 陶瓷 ...
Interface dipole engineering in metal gate/high-k stacks Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond... AP Huang,XH Zheng,ZS Xiao,... - 《Chinese Science Bulletin》 被引量: 8发表...
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning P. D. Kirsch,P. Sivasubramani,J. Huang,... - 《Applied Physics Letters》 - 2008 - 被引量: 214 THE HIGH-k SOLUTION. Bohr,Mark T.,Chau,... - 《IEEE Spectrum》 - 2007 - 被引量: 179 Integration...
文档热度: 文档分类: 幼儿/小学教育--教育管理 文档标签: HighkGateDielectricsforCMOSTechnology 系统标签: dielectricscmosgatehightechnologykyeongjae BrochureMoreinformationfromhttp://.researchandmarkets/reports/2253866/High–kGateDielectricsforCMOSTechnologyDescription:Astate–of–the–artoverviewofhigh–kdielectric...
where Q is the areal charge density in the dipole layer, d1 and d2 are the widths of dipole layers on the SiO2 and HfLaO sides, kSiO2 and kHfLaO are the k values of SiO2 and HfLaO, and x is the thickness of the HfLaO layer. Since an offset can be caused by the dipole layer...
The Schottky barrier heights of metals on HfO2 are modeled, for ideal interfaces of various stoichiometries and for interfaces with defects, and also for dipole layers. DOI: 10.1149/1.3206605 被引量: 6 年份: 2009 收藏 引用 批量引用 报错 分享 ...
Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based high-kgate dielectrics was investigated by means of the flat-band voltage(Vfb)shift in capacitance-voltage curves, and the interface dipole, which modifies the WF, was characterized by x-ray ...
(1) ion movement of unbounded La+ or Zr+ ions in the metal-oxide lattice resulting in dielectric relaxation [83]; (2) the combination of unbound metal ions with electron traps, generating dipole moments and inducing dielectric relaxation [84]; (3) a decrease in crystal grain size, causing...