...举了目前Intel所面临的挑战,包括寻找一种合适的高介电材料(high-k dielectric);采用性能相当的NMOS元件来生产化合物… guba.eastmoney.com|基于7个网页 3. 高介电常数 高致密性与高介电常数(High-k Dielectric)的特性,进而能提升施加至控制电极层120、 122、124、126、128、150的电压范围 … ...
高K介质 (High-k Dielectric)和替代金属栅 (RMG)工艺 2007年,Intel公司宣布在 45nm CMOS 工艺节点上成功地使用高k氧化铪基(Hf-oxide Based)介质和金属栅工艺,可以显著减少栅介质泄漏电流和增加栅导电能力。 但高k氧化铪基栅介质较易被源漏退火步骤的热过程引起结晶化,导致较大的泄漏电流,因此高k介质金属栅模块...
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
Advanced Metal Gate/High-K Dielectric Stacks for High-Performance CMOS Transistors We have successfully engineered n-type and p-type metal electrodes with the correct work functions on high-K gate dielectrics for high-performance CMOS applications. The resulting metal gate/high-K dielectric stacks ...
栅高k高高k介质Highk高k栅介质highgatehighk 系统标签: dielectricgatehigh介质oxidesband METAL OXIDE SEMICONDUCTOR (MOS) DEVICES Term Paper Topic: Hafnium-based High-K Gate Dielectrics AUTHOR KYAWTHETLATT 2 Content 1. High-k Gate Dielectric introduction 3 2. Brief history of high-k dielectric devel...
I. INTRODUCTIONDouble-gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and related multiple-gate device architectures are nowadays widely identified as one of the most promising solutions for Nanoscale integration [7].With one extra gate, the gate to channel coupling is doubled ...
High-k Dielectric Based Amorphous Silicon Thin-Film Transistor for Medical imaginga-Si:H TFTdouble layer dielectricSilvaco simulations... B Siham,H Zoubeida - IEEE 被引量: 0发表: 2018年 New challenges in thin film transistor (TFT) research This paper addresses the current trends in research an...
必应词典为您提供high-k-gate-dielectric的释义,网络释义: 高介电闸极氧化层;栅电介质;门电介质;
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge ...
1、High-k与Low-k的分析 近十年来CPU业者每发表1款新主打CPU,就会顺带标榜该芯片所用的制程技术,最初只标榜尺寸缩密性制程,而近五年来更是强调各种新材质性制程,倘若不去了解新材质制程的意义,那么也将愈来愈不了解新CPU的价值意义过去IBM微电子发表Low k Dielectric(低介电质绝缘,或称:低介电常数绝缘)...