High-k Gate Dielectrics 作者: Houssa, M. 出版年: 2003-12 页数: 614 定价: $ 282.44 ISBN: 9780750309066 豆瓣评分 目前无人评价 评价: 写笔记 写书评 加入购书单 分享到 推荐 内容简介 ··· The drive toward smaller and smaller electronic componentry has huge implications for the materials...
High-k Gate Dielectrics (ed. by M. Houssa, IOP, London, 2003).Houssa. M, editor. High-k gate dielectrics. London: IOP; 2003.J. Robertson and P. W. Peacock, "High-k Gate Dielectrics," Institute of Physics, 2003.High-K Gate Dielectrics. Michel Houssa. . 2003...
indirectly affects FET charge transport characteristics in the semiconductor because of the different charge trapping capacities for holes and electrons.15,16 This Review Article focuses on the importance, development, and implementation of high-k gate dielectrics for modern organic electronics applications....
Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of praseodymium oxide (PrO) and zirconium oxide (ZrO) and a method of fabricating such a combination gate and dielectric layer produces a reliable s....
Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics FIBL worsens as the gate length becomes shorter. Complete removal of high-K dielectrics on the active area induces a smaller FIBL... CF Yeap,S Krishnan - 《Electronics Letters》 被引量: 162发表: ...
◆45纳米制作工艺融合了高介电薄膜(High-K Dielectrics)材料和金属门电路,成功解决了解决了漏电危机和信号延迟问题。 ◆Int…tech.qq.com|基于3个网页 3. 高k介质 高k电介质... ... ) High-k dielectric films 高k电介质薄膜 ) High-k dielectrics 高k介质 ) high-K gate dielectrics 高K栅介质 ... ...
Fermi level pinning elimination with metal gate technologyHfSiON transistor integration into 65 nm node technologySummary This chapter contains sections titled: Introduction Thermal Stability Improvement by Nitrogen Incorporation Interfacial Characteristics Between High- k and Silicon Substrate Gate Material ...
We discuss options for metal–oxide-semiconductor field-effect transistor (MOSFET) gate stack scaling with thin titanium nitride metal gate electrodes and high-permittivity (‘high-k’) gate dielectrics, aimed at gate-first integration schemes. Both options are based on further increasing permittivity ...
K. Gate dielectrics on strained Si/SiGe heterolayers. Solid State Electron. 48, 1369–1389 (2004). Article Google Scholar Toriumi, A. et al. Opportunities and challenges for Ge CMOS—control of interfacing field on Ge is a key. Microelectron. Eng. 86, 1571–1576 (2009). Article Google...