...以及成本及效能的考量,例如,记忆体产品再往下发展,高介电矽数绝缘体(High-K Dielectrics)的材料就相当重要,才能解 … www.maillist.com.tw|基于33个网页 2. 了高介电薄膜 ◆45纳米制作工艺融合了高介电薄膜(High-K Dielectrics)材料和金属门电路,成功解决了解决了漏电危机和信号延迟问题。 ◆Int… ...
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High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrOor HfOthin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics. Equivalent oxide ...
Metal Electrode/High-k Dielectric Gate-Stack Technology for Power Management. High-k dielectrics have been intensively investigated during the last decade, and their performance as a gate dielectric has been improved to the level of ... Byoung,Hun,Lee,... - 《IEEE Transactions on Electron Devic...
110, No. 1 207 and hybrid high-k dielectrics will be presented. Several strategies that are utilized to enhance not only k but also the gate capacitance by reducing the layer thickness will be covered. In this contribution, self-assembled mono- and multilayer nanodielectrics will also be ...
栅高k高高k介质Highk高k栅介质highgatehighk 系统标签: dielectricgatehigh介质oxidesband METAL OXIDE SEMICONDUCTOR (MOS) DEVICES Term Paper Topic: Hafnium-based High-K Gate Dielectrics AUTHOR KYAWTHETLATT 2 Content 1. High-k Gate Dielectric introduction 3 2. Brief history of high-k dielectric devel...
We report a new class of high k dielectrics based on ternary amorphous metal oxide, Bi1-x-yTixSiyOz (BTSO, x = 0.4, y = 0.2). BTSO films grown by atomic layer deposition (ALD) have a dielectric constant of 55-64, which is the highest value reported among amorphous dielectric films...
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with la
2、认为Low k与High k是相互矛盾的技术,且半导体业者都纷纷标榜Low k、High k等新制程技术能为芯片电路带来新的提升效益,因此迷惑也就加深,所以以下本文将对此进行更多讨论。一、LOW-K在集成电路内部,由于ILD(Inter Layer Dielectrics,层间电介质)的存在,导线之间就不可避免地存在分布电容,或者称之为寄生电容。分...
Unwanted frequency dispersion in high-k dielectrics has frequently been observed in capacitance-voltage (C-V) measurements. The frequency dependence of dielectric permittivity (K-value) cannot be assessed before suppressing the effects of the lossy interfacial layer (between the high-k thin film and ...