Tadigadapa, "High aspect ratio plasma etching of bulk lead zirconate titanate", Proc. SPIE, 6109, 61090D, 2006Subasinghe, S.S., A. Goyal, and S. Tadigadapa. High aspect ratio plasma etching of bulk lead zirconate titanate. 2006. USA: SPIE - The International Society for Optical ...
1. A plasma etching method for preparing high-aspect-ratio structures, comprising the steps of: forming a mask on a substrate, wherein the mask has a pattern; placing the substrate with the mask into a plasma etching apparatus, wherein the plasma etching apparatus comprises a processing chamber...
The plasma gas composition for the etching comprises Ar, a first fluorocarbon, Oand a second fluorocarbon, wherein the fluorine-to-carbon ratio of the second fl... TY Huang,CM Wu - US 被引量: 727发表: 2005年 Laminated high-aspect-ratio microstructures in a conventional CMOS process ...
Fluorocarbon -based chemistries were used to study the effect of wafer temperature on the etch of high aspect ratio hardmasks composed of SiO 2 and SiN x ... S Lee,YC Tien,YW Chang - 《Plasma Chemistry & Plasma Processing》 被引量: 4发表: 2002年 Spin-on-carbon hardmask based on fulle...
etching of high aspect ratio features in si using s f 6 o 2 h br and s f 6 o 2 cl 2 plasma S Gomez,RJ Belen,M Kiehlbauch,... 被引量: 0发表: 0年 Fabrication of high-density Si and SixGe1x nanowire arrays based on the single step plasma etching process Dense arrays of ...
(see Methods). Since the measurement is precise to the few-percent level, a similarly detailed understanding of every aspect of the simulated system is required—in particular the 6D phase space of the beam, as well as the longitudinal density profile of the plasma. Using quadrupole scans and...
Recently, physical vapor deposition (“PVD”) has been revived with the introduction of the Ionized Metal Plasma (“IMP”) process. Ionizing sputtered metal particles allows for highly directional PVD for depositing material in contact openings with up to about 6 to 1 aspect ratios and having 0....
Ionization induced plasma defocusing tends to clamp laser intensity and reshape the radius profile146,147. The achievable SXR spectrum is therefore a collaborative result of atomic response and coherent buildup of high-harmonic strength. Wavelength scaling of HHG cutoff photon energy. Calculated cutoff ...
Advanced time-multiplexed plasma etching of high aspect ratio silicon structures. J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. Process. Meas. Phenom. 2002, 20, 3106–3110. [Google Scholar] [CrossRef] Wu, B.; Kumar, A.; Pamarthy, S. High aspect ratio silicon etch: A review...
Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? Jpn. J. Appl. Phys. 2018, 57, 06JA01. [Google Scholar] [CrossRef] Vincent, M. Donnelly and Avinoam Kornblit, Plasma etching: Yesterday, today,...