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Source/Gate Material-Engineered Double Gate TFET for improved RF and linearity performance: a numerical simulation. Appl. Phys. A 124, 739 (2018). https://doi.org/10.1007/s00339-018-2158-4 Download citation Received14 June 2018 Accepted04 October 2018 Published08 October 2018 DOIhttps://doi....
The study material provided by career endeavour has all types of questions and prepares us well for the exams. Roselin IIT JAM Biotech Topper 2022 I had an opportunity to attend this well organised PLAB 1 course recently on June 9th 2022 which included variety of cases with physical signs...
SAXENA M; HALDAR S; GUPTA M;.Physics- based analytical modeling of potential and electrical field distribution in dual material gate ( DMG)-MOSFET for improved hot electron effect and carrier transport efficiency.IEEE Trans Electron Dev.2002.1928-1938...
2D Bi2O2Se: an emerging material platform for the next-generation electronic industry. Acc. Mater. Res. 2, 842–853 (2021). Article ADS CAS Google Scholar Tan, C. et al. Strain-free layered semiconductors for 2D transistors with on-state current density exceeding 1.3 mA μm−1. Nano...
The present study reported pure pre-synthesized Al1.997Hf0.003O3 target for the formation of novel high-k gate dielectric thin films using pulsed laser deposition technique. High substrate temperature of 800 °C and ultra-high-vacuum condition at 10−8 Torr were used to produce stable hexagonal...
Spin-valley physics and related device applications have been at the center of TMDCs research. In this work, through near-resonant excitation, we showed that the DVP of ML-MoTe2at 4 K can be controllably increased by gating from near zero to 38% and 33% for excitons and trions, respect...
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2), which remains the material of choice to date. Here we report HfO2–ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide ...