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by implementing single-layer MoS2as the semiconducting gate. Dangling-bond-free 2D materials such as MoS2are especially suitable for the implementation of SG-FET, as high-quality thin films could be transferred
Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET Article Open access 07 February 2023 Data availability The data that support the findings of this study are available from the corresponding author on reasonable request. Code availability All computational data are prese...
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To study the impact of 𝑇𝑆𝑖TSi on hole mobility, silicon sheets of different thicknesses were epitaxially grown, and the 𝑇𝑆𝑖TSi was measured using TEMs. Figure 5. A TEM cross-section of GAA nanosheet FETs. The 𝑇𝑆𝑖TSi is uniform in thickness along the 𝑊𝑠ℎ...
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Barker, Study of discrete doping induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations. IEEE Electron Dev. Lett. 33(2), 194–196 (2012) Article ADS Google Scholar S.-J. Choi, M. Dong-Il, S. Kim et al., Sensitivity of threshold voltage to ...
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