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In this work, the novel characteristics of a FinFET with dual-material gate (DMG) are explored theoretically using a 3D numerical simulator and compared with those of a single material gate (SMG) FinFET in terms of threshold voltage roll off, drain induced barrier lowering (DIBL) and the ...
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The hill slope consists of overburden strata of weathered and fractured rockfill / gravelly material with thickness ... KR Dhawan,B Muralidhar,MJS Edlabadkar,... 被引量: 0发表: 0年 Ecotoxicological assessments of discharge waters from Cosmo Howley, Pine Creek, Tom's Gully and Brocks Creek ...
No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications. 展开 ...
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1.Good quality raw material of the board use for dresser table: High density particle board or MDF ,which have the character anti-water ,anti-dirty ,anti-scratch , easy to clean and keep fresh color),desk top and side leg thickness are 25mm or 50mm ...
1.Good quality raw material of the board use for dresser table: High density particle board or MDF ,which have the character anti-water ,anti-dirty ,anti-scratch , easy to clean and keep fresh color),desk top and side leg thickness are 25mm or 50mm thic...
Preparation and Characterization of Ge4+-doping Li4Ti5O12 Anode Material for Li-ion Battery and Its Electrochemical Properties The spinel Liinf4/infTiinf5-x/infGeinfx/infOinf12/inf (x=0, 0.05, 0.1, 0.15) electrode materials were successfully synthesized by Sol-Gel method using Ti(O... CX...
Emitter Material Comparison between InGaP and InGaAsP in GaAs-Based Heterojunction Bipolar Transistors InGaP ( E=1.87 eV)/GaAs and InGaAsP( E=1.77 eV)/GaAs Npn heterojunction bipolar transistors (HBTs) were fabricated. In devices with 110 m脳110 m emitter ar... M Ohkubo,A Iketani,M Ikeda,....