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SK Gupta,S Baishya - 《Journal of Nano & Electronic Physics》 被引量: 8发表: 2013年 2D Transconductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOl MOSFETs The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current...
The possibility of using graphene nanoribbons (GNRs) as the material for resonant tunneling diodes (RTDs) was investigated using a device simulator based o... Teong,Hansen,Lam,... - 《Journal of Applied Physics》 被引量: 19发表: 2009年 An investigation of performance limits of conventional and...
Compared with amorphous oxides, crystalline dielectric materials such as hexagonal boron nitride (hBN)14, calcium fluoride (CaF2) (ref. 11) and perovskite strontium titanium oxide (SrTiO3) (ref. 13) have atomically flat surfaces that bond well for smoother dielectric/2D material interfaces. In...
In this article, a physics-based 2-D analytical model for electrical characteristics such as electric field, surface potential, and drain current of source... KK Kavi,S Tripathi,RA Mishra - 《Silicon》 被引量: 0发表: 2024年 A Two Dimensional Analytical Model of Heterostructure Double Gate wit...
Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore, Singapore Hao Chen, Jiawei Liu, Barbaros Oezyilmaz & Jens Martin Contributions J.M. initiated and coordinated the work. H.C. conducted the electrostatic modeling, device fabrication, as well as electrica...
A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs Journal of Applied PhysicsI. Krylov, B. Pokroy, D. Ritter, M. Eizenberg, A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs, J. Appl. Phy...
Dai Y. H,Hu Y,Liu Q, et al.Physics-based modeling and simulation of Dual Material Gate(DMG)LDMOS. 2006 IEEE on Circuits and Systems Asia PacificConferen ce . 2006Physics-basedmodeling and simulation of dual material gate(DMG)LDMOS. DAI Y H,HU Y,LIU Q,et al. IEEE Asia...
This work seeks to present a comparative analysis of linear and analog/RF performances of a silicon (Si)-source double gate tunnel field effect transistors (DG-TFET), germanium (Ge)-source DG-TFET and Gate Material Engineered germanium (GME-Ge)-source DG-TFET. The objective of this analysis...
The use of valley excitonic states of transition metal dichalcogenides to store and manipulate information is hampered by fast carrier recombination and short valley lifetime. We propose theoretically a scheme to overcome such an obstacle, by applying a