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The use of valley excitonic states of transition metal dichalcogenides to store and manipulate information is hampered by fast carrier recombination and short valley lifetime. We propose theoretically a scheme to overcome such an obstacle, by applying a
Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency[J].IEEE Transactions on Electron Devices,2002,(01):1928-1938.doi:10.1109/TED.2002.804701....
Physics-Based Analytical Modeling of Potential and Electrical Field Distribution in Dual Material Gate (DMG)-MOSFET for Improved Hot Electron Effect and ... M Saxena,S Haldar,M Gupta,... - Gordon and Breach Publishers, 被引量: 110发表: 0年 Physics-Based Analytical Modeling of Potential and ...
Results Theory. The aim of this study is to provide an explanation for gate-controlled Schottky barrier of a met- al-graphene transistor on a silicon substrate reported in ref. 7. We thought that this modeling of the Schottky barrier height lowering effects could be used in any metal-...
An overview of phase-change memory device physics J. Phys. D: Appl. Phys., 53 (21) (2020), 10.1088/1361-6463/ab7794 Google Scholar [42] Osburn C.M., Raider S.I. The effect of mobile sodium ions on field enhancement dielectric breakdown in SiO[sub 2] films on silicon J. Electroch...
¹ 四川师范大学 物理与电子工程学院 微纳光学实验室 Laboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China² Physik-Department, Lehrstuhl für Funktionelle Materialien, Technische Universität München, James-Franck-Stra...
The SWCNT diameter d ~1 nm for the gate electrode (22) minimized par-asitic gate to source-drain capacitance, which ischaracteristic of lithographically patterned tallgatestructures.The~1-nmgatelengthoftheSWCNTalso allowed for the experimental exploration ofthe device physics and properties of MoS 2...
Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is proposed
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China Xinyu Gao & Kaili Jiang Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, China Xinyu Gao & Kaili Jiang Contributions H.P. and C.T. conceived the project ...