Yu, M. Stettler , “Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness,” IEEE Trans. SISPAD, vol. 6, pp. 247-250, 1999. :Z. Han, C. Lin, N. Goldsman, I. Mayergoyz, S. Yu, and M. Stettler, "Gate leakage current ...
2f) using the equation EOT = 3.45/CTG (ref. 32). Furthermore, six devices with different EOTs are fabricated as shown in Extended Data Fig. 6. Figure 2g compares the EOT values for different dielectric thicknesses (td). The comparison of the dielectric constant with td is shown ...
This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) ...
GateLeakage byDomenikHelms–OFFISGermany domenik.helms@offis.de Thissectionwillpresentashortsurveyongateleakagecurrents. Brieflypresentingthebasicsofthetunnel-effect,directandFowler- Nordheimtunnellingareexplained.Analysingtheequationofgate tunnelcurrents,theirdependenceoftemperatureandoxidethicknessis discussed. 1)...
RELY uses information obtained by solving the Boltzmann equation, to calculate gate leakage current and oxide charge deposition. Agreement with experiment was obtained.Neil GoldsmanN. Goldsman, Modeling electron transport and degradation ... N Goldsman 被引量: 2发表: 1989年 ...
obtain a quadratic equation in terms of the variable V ox , which is solved to the following: V ox = 1−2(V fb +ψ S −Vgs) 2 ox q Si N poly T 2 ox − 1 2 ox q Si N poly T 2 ox . (5) The flat-band voltage V fb can be derived from MOS capacitance-voltag...
Define logic gate. logic gate synonyms, logic gate pronunciation, logic gate translation, English dictionary definition of logic gate. n. A mechanical, optical, or electronic system that performs a logical operation on an input signal. American Heritage
The Poisson equation is again solved for the new value of potential using this quantum electron charge density The process is repeated until a convergence is obtained. Other Features Included in the Theoretical Model Partial ionization of the impurity atoms ...
is the total charge per unit area in the depletion region of thicknessWDmax.Equation (28)still applies in the case where, for ease in fabricating small structures, the metal gate is replaced by a heavily dopedp+orn+polycrystallinesilicon layer. Appropriate changes in the value ofVFBreflect the...
The equation of the thermal conductivity model can be expressed as follows: k(TL)=(TC.CONST)/(TL300)TC.NPOW,kTL=(TC.CONST)/TL300TC.NPOW, (1) where TLTL is the local lattice temperature, TC.CONST is the thermal conductivity constants of the material at 300 K, and TC.NPOW is ...