This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to ...
What is Gallium Nitride on Sapphire? Silicon has long been the substrate of choice for power electronics, but due to advancements in research, GaN has superseded silicon. The reason for this change is that GaN is considered a wide-bandgap material. This means that it has a high breakdown ...
Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by assuming a thin, degeneraten-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties...
This rotation is the result of growing (12¯10) plane of GaN on (11¯02) plane sapphire. It is in agreement with other growth systems such as non-polar [44] and semipolar GaN [45]. Despite the small lattice mismatch of a-GaN and r-sapphire, a Conclusion The structural ...
AlGaN/GaN heterojunction field effect transistors (HFET) on sapphire substrates have demonstrated ability as power devices operating with high current densities and high breakdown voltages. Additionally, AlGaN/GaN HFET devices have a very low on-state resistance. This makes these devices ideal for autom...
High-quality C-doped GaN buffers grown on sapphire substrates were employed for the fabrication of high-power AlGaN/GaN heterojunction field effect transis... YC Choi,M Pophristic,B Peres,... - 《Semiconductor Science & Technology》 被引量: 34发表: 2007年 ...
Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si ...
InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy onc-plane sapphire substrates. The growth of InGaN is carried out at550 °Cwith a large V/III ratio to counteract the low efficiency ofNH3at that temperature and to promote the two-dimensional mode of growth. An In compo...
Finally, PLD can be performed on silicon, sapphire, and glass41. Among these options, the Si (silicon) substrates have garnered significant attention from researchers due to several advantages, including their cost-effectiveness, good thermal conductivity, ease of fabrication, and abiity to provide...
We have fabricated multi-finger AlGaN/GaN heterojunction field effect transistors (HJFETs) with a sub-half-micron gate-length on a sapphire substrate that ... K Kunihiro,K Kasahara,Y Takahashi,... - 《Japanese Journal of Applied Physics》 被引量: 36发表: 2000年 Effect of temperature on ...