K. Mishra, "High breakdown voltage p-n diodes on GaN on sapphire by MOCVD," Phys. Status Solidi A, vol. 213, no. 4, pp. 878-882, Apr. 2016. DOI: 10.1002/pssa.201532554.breakdown voltage p-n diodes on GaN on sapphire by MOCVD," Phys. Status Solidi Appl. Mater. Sci., vol. ...
AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconduct... This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MO...
What is Gallium Nitride on Sapphire? Silicon has long been the substrate of choice for power electronics, but due to advancements in research, GaN has superseded silicon. The reason for this change is that GaN is considered a wide-bandgap material. This means that it has a high breakdown ...
due to the higher-quality growth, relative to material grown on silicon. The sapphire substrate is also more electrically insulating than silicon, which should enable kiloVolt blocking capability. [Sapphire is also more thermally insulating, which could hamper the heat dissipation needed for high ...
ROM - Read-Only Memory SCR - Semiconductor Controlled Rectifier SCS - Semiconductor Controlled Switch SOS - Silicon-on-Sapphire TTL - Transistor-Transistor Logic UJT - Unijunction Transistor VLSI - Very Large-Scale Integration VPE - Vapor-Phase Epitaxy YAG - Yttrium-Aluminum Garnet 是德科技 ...
Electric breakdownElectric fieldsResistanceIn this letter, we have examined the impact of trench dimensions on the breakdown voltage and ON-resistance of trench MOSFETs fabricated on sapphire and bulk GaN substrates. Contrary to simulation studies, the breakdown voltage decreased with an increase in...
Possibility of using GaN-HEMT grown by MOVPE on 100mm sapphire substrates in the industry has been investigated. Bowing of 2m thick GaN on 100mm substrate was 40 to 60 m. Excellent uniformity of sheet carrier concentration of HEMT structure wafer across the wafer was obtained by optimizing the...
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
AlGaN/GaN heterojunction field effect transistors (HFET) on sapphire substrates have demonstrated ability as power devices operating with high current densities and high breakdown voltages. Additionally, AlGaN/GaN HFET devices have a very low on-state resistance. This makes these devices ideal for autom...
The authors report on the characteristics of 0.25 /spl mu/m gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100 V) and high frequency performance (f/sub T/=27 GHz, f/sub max/=80 GHz) was achieve...