· GaN Power Device发展现状 - On Sapphire · GaN Power Device发展现状 - Vertical GaN · GaN Power Device发展现状 - On Qst · GaN Power Device供应商分布 · GaN-on-Si Power Device成本结构分析 · GaN-on-Si Power Device供应...
· GaN Power Device发展现状 - On Sapphire · GaN Power Device发展现状 - Vertical GaN · GaN Power Device发展现状 - On Qst · GaN Power Device供应商分布 · GaN-on-Si Power Device成本结构分析 · GaN-on-Si Power Device供应...
A half bridge circuit includes a sapphire substrate, a GaN upper switch on the sapphire substrate, a GaN lower switch on the sapphire substrate and coupled to the GaN upper switch, a first conductor coupled to the upper switch, a second conductor coupled to the lower switch, and a capacitor...
ZHENG Y K,LIU G G,HE Z J,et al.0.25 Ixm gate-length AlGaN/GaN power HEMTs on sapphire with fr of 77 GHz [J].Journal of Semiconductors,2006,27(6):963-965.μm Gate-Length AlGaN/GaN Power HEMTs onSapphire with ft of 77 GHz. 郑英奎,刘果果,和致经,刘新宇,吴德馨.半导体学报,第27...
ROM - Read-Only Memory SCR - Semiconductor Controlled Rectifier SCS - Semiconductor Controlled Switch SOS - Silicon-on-Sapphire TTL - Transistor-Transistor Logic UJT - Unijunction Transistor VLSI - Very Large-Scale Integration VPE - Vapor-Phase Epitaxy YAG - Yttrium-Aluminum Garnet 是德科技 ...
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant...
The device performance of GaN based Double Hetero junction Field-Effect Transistor(DHFET) is largely dependent on device scaling issues. The authors' simul... MSI Khan,HMM Maruf,MA Choudhury - IEEE 被引量: 1发表: 2013年 GaN based laser-structures on sapphire substrates using single crystalline...
然而,近日一家聚焦垂直GaN技术的美国初创新星公司NexGen Power Systems的突然倒闭,给该技术原本广阔的行业前景平添了一丝疑虑,也再次引发了业界对垂直GaN的关注和探讨。 垂直GaN,市场广阔 目前GaN器件主要有两种技术路线,平面型与垂直型。 平面型GaN器件通常基于非本征衬底,如Si、SiC、蓝宝石(Sapphire)等。早期高质量单...
A gate-recessed AlGaN/GaN high electron mobility transistor(HEMT) on sapphire substrate having fmax of 200 GHz is reported.The gate-recessed device with a T-shaped gate exhibits a maximum drain current density of 1.1 A/mm,and a peak value of 421 mS/mm for extrinsic transconductance with mini...
A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN po...