A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT ...
今年,英特尔继续发力GaN,在IEDM2023上,发表题为《DrGaN:采用E模式GaN MOSHEMT和三维单片硅 PMOS的300mm硅基GaN功率开关集成CMOS驱动器技术》(DrGaN : an Integrated CMOS Driver GaN Power Switch Technology on 300mm GaN on Silicon with E mode GaN MOSHEMT and 3D Monolithic Si PMOS)的论文。 2004年,英...
The Si-IGBT switch has been replaced with a GaN-HEMT switch to reduce switching losses and improve filter design. Mathematical analysis for power loss and passive filter design is compared with the Si-IGBT inverter. This paper discusses the simulation results for CMV, leakage current, and THD ...
摘要:由于传统驱动电路难以发挥新型器件GaNHEMT的高频优势,为了提高电路工作频率,充分利用GaN HEMT特性,设计了一种适用于该器件的驱动电路。经过对比分析GaNHEMT器件和SiMOSFET器件的寄 生参数和工作特性,得出GaNHEMT的特点和对驱动电路的要求;采用LTspice软件仿真,描述该驱动电路 ...
时间荏苒,今年英特尔在IEDM2023上面向公众发表了一篇名为《DrGaN:采用E模式GaN MOSHEMT和三维单片硅 PMOS的300mm硅基GaN功率开关集成CMOS驱动器技术》(DrGaN : an Integrated CMOS Driver GaN Power Switch Technology on 300mm GaN on Silicon with E mode GaN MOSHEMT and 3D Monolithic Si PMOS)的学术论文,...
该平台基于DPT平台[19-20]与四管Buck-Boost(Four- Switch Buck-Boost, FSBB)电路改进而成。Q1~Q4为待测器件安装位置,Vin为直流电压、L为电感,RL为负载安装位置。1、2、3为预留接口,根据测试需求,可连接接口2与1或接口2与3,通过转换电路连接的方式为待测器件提供不同测试模式,进而提供多样化的组合测试条件。
The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due...
Recommended EiceDRIVER™ gate driver ICs for GaN HEMTs up to 200V Wide-bandgap semiconductors allow higher electric field strengths and thus result in significantly smaller transistors compared to silicon alternatives. Consequently, GaN high electron mobility transistors (HEMTs) can operate at high-s...
晶体管类型: HEMT 增益: 17.4 dB 晶体管极性: N-Channel Vds-漏源极击穿电压: 50 V Vgs-栅源极击穿电压 : - 2.8 V Id-连续漏极电流: 7.2 A 输出功率: 132 W 最小工作温度: - 40 C 最大工作温度: + 85 C Pd-功率耗散: 140 W 安装风格: SMD/SMT 封装/ 箱体: NI-360 配置: Single 工作频率...
limited by the capacitor rating. This half-bridge can switch continuous currents of 12A and peak currents of 35A, hard or soft-switching. Operating frequency can be up to several MHz, depending on transistor dissipation (limited to about 15W per device with appropriate heatsink and airflow). ...