GaN-HEMTs exhibit much lower stored charge (QOSS) while providing identical conduction losses (RDS;On). However, choosing the right switch is not straight forward and the non-linear relation of voltage and charge has to be taken into account. This paper presents a guide on how to select ...
I am working on a power management project. I want to understand the core difference between HEMT and bidirectional switch, that is, when can only HEMT be used and when can only bidirectional switch be used. Thanks for all the answers.Like Reply Subscribe 10 0 2 View all forum discussions...
HEMT器件AlGaN功率开关MMIC氮化镓应用高功率SPDT开关0.25 m Ga N HEMT with Al Ga N back barrier for high power switch application has been presented. By introducing Al Ga N back barrier, the buffer layer breakdown voltage for the metal-organic chemical vapor deposited Al Ga N/Ga N hetero-...
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing...
The two most common dissipation strategies were analysed: top-side cooled GaN e-HEMTs and bottom-side cooled GaN e-HEMTs and thermal vias. Top-side cooled GaN e-HEMTs have the thermal pad on its top side, while bottom-side cooled GaN e-HEMTs have the thermal pad on its bottom side....
This test provides a prediction for the drift of switch parameters, offering pre-guidance for the robustness of the optimized application scheme. Keywords: p-GaN HEMT; dynamic switching; capacitance; trap 1. Introduction As a representative material of third-generation semiconductor materials, gallium ...
United States Patent US9735771 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
The enhancement-mode (E-mode) high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application,employing CF4plasma treatment. The results showed that by expanding the distance of gate to drain,LGDfrom 5 μm to 15 μm...
switch modelsymmetrical structureMMICGallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A ...
I. Rossetto et al., Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs, IEEE Trans.Electron Devices, v. 64, n. 9, p. 3734, 2017. 12. R. Li, X. Wu, S. Yang, K. Sheng, Dynamic ON-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and...