AlGaN/GaN HFETField-plateDouble-layered passivationBreakdownFrequency responseWe performed physics-based 2-dimensional TCAD device simulations to optimize field-plated AlGaN/GaN heterostructure field effect transistors (HFETs) for high-power and high-frequency operation. The effects of the field plate ...
This paper reports an analysis of pulsed I-V characteristics of AlGaN/GaN HFETs fabricated with various field plate gate and T-gate geometries. Pulsed I-V characteristics are known to correlate with RF output power measurements vs. bias, and are an important estimator of "knee voltage walkout...
bias, and are an important estimator of "knee voltage walkout" and "current slump" effects in nitride HFETs. It has been reported that the addition of a field plate greatly reduces the amount of "knee voltage walkout" in pulsed I-V measurements. In this work we show in simulation that...
Insulator Engineering in GaN-based MIS HFETs Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), I.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated ... N Maeda,M Hiroki,N Watanabe,... - Gallium Nitride Materials & Devices II 被引量: 15...
Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan 4 National Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, Taiwan * Author to whom correspondence should ...
Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China 4 GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen 518055, ...
Therefore, the design and optimization of the FP rely on engineering experiments or TCAD. This device is simulated with Silvaco-ATLAS. The polarization effect needs to be considered at the interface between the AlGaN barrier layer and the GaN channel layer to ensure the generation of 2DEG. The...
Structure Hyeon-Tak Kwak 1, Seung-Bo Chang 1, Hyun-Jung Kim 1, Kyu-Won Jang 1, Hyung Sup Yoon 2, Sang-Heung Lee 2, Jong-Won Lim 2 and Hyun-Seok Kim 1,* 1 Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Korea; alien6722@naver.com (H.-T...
future internet Article A Digital Twin Framework Embedded with POD and Neural Network for Flow Field Monitoring of Push-Plate Kiln Pin Wu 1,* , Lulu Ji 1, Wenyan Yuan 1, Zhitao Liu 1 and Tiantian Tang 2 1 School of Computer Engineering and Science, Shanghai University, Shanghai 200444, ...