Power semiconductor devices having overlapping floating field plates for improving breakdown voltage capabilityUS5731627 * 1997年2月26日 1998年3月24日 Samsung Electronics Co., Ltd. Power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability...
There continues to be a strong interest to develop area efficient, reliable edge termination techniques for advanced power semiconductor devices. The most commonly used field limiting ring (FLR) technique in planar MOS controlled devices involves deep p+ rings [1], [2], [3]. Its major advantage...
Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage... C Suh,Y Dora,N Fichtenbaum,... - 《International Electron Devices Meeting》 被引量: 0发表: 2006年 Method of forming a high electron...
Influence of a multilayer grounded field plate on the effect of quasi-saturation of current-voltage chatacteristics of power radio frequence lateral transi... Was been performed modeling of LDMOS-transistor structures with two- and three-layer grounded field plates. On both structures the manifestat...
The RFP electrodes 35 also function as a recessed field plates to reduce the electric field in the channel regions 45 when MOSFETs 30 and 50 are reverse-biased. This effect enables the use of shorter channel lengths, without concern about punchthrough breakdown, and this results in a lower sp...
The positioning of the lung blocks is confirmed before the first treatment. Film can be used, but it has the disadvantage of requiring time to develop.Computed radiography(CR) film cassettes use photo-stimulated phosphor plates to obtain x-ray images. Even though the CR cassettes require an up...
- 《IEEE Workshop on Wide Bandgap Power Devices & Applications in Asia》 被引量: 0发表: 2021年 Diamond/GaN HEMTs: Where from and Where to? Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential ...
This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain curr...
the respective potentials at the field plates can be varied linearly, and corresponding potential distribution can be achieved on the surface of a semiconductor substrate. As a result, electric field concentration on the surface of the semiconductor substrate under HVI can be prevented effectively. The...
The disclosure herein is related to semiconductor devices, such as laterally diffused metal-oxide-semiconductor (LDMOS) transistors, with double-sloped field plates (which may also be referred to as a field dielectric plate or a drift field dielectric). The disclosure herein is further related to ...