英[fi:ld pleit] 美[fild plet] 释义 静电场起电板;场板;场电极 实用场景例句 全部 At the same time, theflexible graphite flowfield plategas penetrability, component and body resistance. 同时测量了柔性石墨流场板的透气量 、 各种成分的含量、体电阻等基础数据. ...
美 英 un.场电极 网络电场板;场效电板 英汉 网络释义 un. 1. 场电极 例句
A field-plate semiconductor structure includes a semiconductor substrate, a source ohmic contact, a drain ohmic contact, and a gate contact disposed over a gate region between the source ohmic contact and the drain ohmic contact, and a source field plate connected to the source ohmic contact. A...
网络释义 1. 流场板 2.2.2流场板(Flow Field Plate) 192.2.3 端板(End Plate) 202.2.4 集电板(Current Collector Plate) 212.2.5 气密垫片(Ga… ethesys.library.ttu.edu.tw|基于14个网页 2. 流道板 ...电流收集极(Current Collector)、流道板(Flow Field Plate): 集电板是让电子能经外电路完成一回路;...
1) field-plate length 场板长度1. The effect of the field-plate length L_ FP on the electric field distribution in the channel is thoroughly analyzed by establishing a simplified model. 对不同场板尺寸的AlGaN/GaN场板结构高电子迁移率晶体管进行了研究,建立简化模型分析场板长度对沟道电场分布的...
This paper presents the re-optimization of DR-LDMOS with new Metal-2 field plate designs with respect to Metal-1 and ILD-1 to maintain a stable and robust breakdown voltage (BV) after stress. 展开 关键词: BiCMOS integrated circuits optimisation power MOSFET semiconductor device breakdown 1 ...
Field-plate mesfet 优质文献 相似文献 参考文献Power dependent input impedance of field plate MESFETs Field plates, when applied to FETs, are known to allow operation at much higher drain voltages and power densities. A gate field plate changes the internal... TA Winslow - IEEE Compound Semiconduc...
field peaks near the gate and field-plate edges. It is these field peaks that are responsible for device breakdown. The other device parameters were a source–gate distance of 1.1μm, gate length of 0.8μm, gate width of 80μm, and gate–drain distance of 6μm. The off-state ...
In this letter, high-performance 90-nm dual-gate nMOSFETs with field-plate (FP) metal were demonstrated for high-power and low-frequency noise device applications. The pro posed dual-gate nMOSFETs with FP metals had a higher maximum oscillation frequency (fMAX)>; a lower noise power spectral...
AlGaN/GaN high-electron-mobility transistors (HEMTs) with various field-plate (FP) and gate-to-drain distance extensions are fabricated and investigated. Experiments are carried out on 20 transistors. Their ON-state resistance (R-ON), OFF-state breakdown voltage (V-BR), RF performance, and lo...