Field-plateDouble-layered passivationBreakdownFrequency responseWe performed physics-based 2-dimensional TCAD device simulations to optimize field-plated AlGaN/GaN heterostructure field effect transistors (HFETs) for high-power and high-frequency operation. The effects of the field plate dimensions and the...
It has been reported that the addition of a field plate greatly reduces the amount of "knee voltage walkout" in pulsed I-V measurements. In this work we show in simulation that trapped charges at the AlGaN surface can build up to the level required for knee voltage walkout, and that ...
We report on a novel approach for designing high-frequency AlGaN/GaN HEMTs based on gate-drain field engineering. This approach uses a drain-connected field controlling electrode (FCE). The devices with gate-to-FCE separation of 0.5–0.7 μm exhibit much smaller frequency behavior degradation wit...
reached by molecular engineering of organic sensitizers2 and over 21% for panchromatic dye-sensitized cell in conjunction with a perovskite cell using a system of spectral splitting3 this technology is becoming a credible alternative for the most popular first generation silicon-based inorganic solar ...
2Department of Mathematics, KNU-Center for Nonlinear Dynamics, Kyungpook National University, Daegu, 702-701, South Korea. 3School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona, 85287, USA. Correspondence and requests for materials should be addressed toY.D...
It has been reported that the addition of a field plate greatly reduces the amount of "knee voltage walkout" in pulsed I-V measurements. In this work we show in simulation that trapped charges at the AlGaN surface can build up to the level required for knee voltage walkout, and that ...
Insulator Engineering in GaN-based MIS HFETs Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), I.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated ... N Maeda,M Hiroki,N Watanabe,... - Gallium Nitride Materials & Devices II 被引量: 15...
AlGaN/GaN heterojunction field effect transistors (HFETs) on sapphire substrates for high-power switching applications were fabricated using a self-align process. Without any additional field plate design, the fabricated devices with gate-drain spacing (Lgd) of 16 µm exhibited a high breakdown ...
lungkorn 1, Wittawat Yodsomjai 2, Suraparb Keawsawasvong 3*, Thanh Son Nguyen 1, Weeraya Chim‑Oye 4, Pornkasem Jongpradist 2 & Suched Likitlersuang 1* The basal heave stability of supported excavations is an essential problem in geotechnical engineering...
2Department of Materials Science and Engineering, The Pennsylvania State University, PA, University Park, 16802, USA. 3Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA. Correspondence and requests for materials should be addressed to A....