多层光刻胶 multilevel resist 电子束光刻胶 electron beam resist X射线光刻胶 X-ray resist ... shergem.blogspot.com|基于1 个网页 例句 释义: 全部,电子束抗蚀剂,电子束光刻胶 更多例句筛选 1. The calculation of contrast in electron beam resist 电子束抗蚀剂反差的计算 www.ilib.cn 2. A ...
PURPOSE:To let an electron-beam resist also have resistance to O2 reactive etching by incorporating Si atoms in the electron-beam resist. CONSTITUTION:Org. silicone is incorporated into an electron-beam resist so as to contain 5-20wt% Si atom in the electron-beam resist. Thus, resistance to...
a high-resolution electron-beam resist 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 一个高分辨率的电子束抗性...
PURPOSE:To let an electron-beam resist also have resistance to O2 reactive etching by incorporating Si atoms in the electron-beam resist. CONSTITUTION:Org. silicone is incorporated into an electron-beam resist so as to contain 5-20wt% Si atom in the electron-beam resist. Thus, resistance to...
aFirst, a high-resolution electron-beam resist for e-beam lithography was spincoated and soft-baked on a SI-GaAs substrate after acetone cleaning. 首先,高分辨率电子射线为e射线石版印刷在SIGaAs基体抵抗是spincoated并且软烘烤了在丙酮清洁以后。 [translate] ...
As feature sizes of semiconductors grow smaller, a resist having dry etching durability and high sensitivity is required for electron beam lithography. However, the positive type electron beam resist having both high sensitivity and high dry etching durability, which suits for practical use, has not...
electron-beam-photo--resist-exposure网络光致抗蚀剂的电子束曝光网络释义 1. 光致抗蚀剂的电子束曝光 微电子学英... ... Electronic -grade 电子能 Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光 Electron gas 电子气 ... baike.baidu.com|基于70个网页©...
专利名称：Electron-beam-sensitive resist material for microstructures in electronics 发明人：Erwin Knapek,Helmut Formanek 申请号：US07/017982 申请日：19870224 公开号：US04837125A 公开日：19890606 专利内容由知识产权出版社提供 摘要：An electron-beam-sensitive resist material is provided that includes film ...
PROBLEM TO BE SOLVED: To obtain an electron beam resist resistant to dry etching and high in resolution and sensitivity and applicable by spin coating by using a C<Sub>60</Sub> fullerene derivative having a specified structural formula. ;SOLUTION: This C<Sub>60</Sub> fullerene derivative to...
PMMAhas been the most studied of the e-beam positive resist polymers. Images approaching 200Å have been resolved in PMMA.91In addition, PMMA has excellent coating and development properties for resist applications. However, the low sensitivity of PMMA (8×10−5C cm−2at 20keV) and the ...