A positive electron beam resist lacquer binder which comprises polymerized or copolymerized units of: (A) 0 to 95 mol-% of at least one alkyl ester of methacrylic acid having from 1 to 20 carbon atoms in the alkyl moiety; (B) 5 to 100 mol-% of at least one monomer corresponding to ...
A highly sensitive, dry etch resistant, positive resist system is described that is useful for both e-beam and X-ray lithography. The resist consists of a radiation sensitive poly(olefin sulfone) and a cresol novolac resin together with an appropriate solvent system. The polysulfone sensitizer is...
PURPOSE:To reduce loss of a resist film at the time of development by developing a positive type electron beam resist made of an aromatic sulfonic acid ester of a phenolic resin with a mixture of alcohol and water. CONSTITUTION:A mixture of alcohol and water is used for developing a positive...
The pores were fabricated by vertically scanning a single voxel through the resist. For evaluating the voxel height and shape, the voxel was lowered into the resist in steps of 50 nm, starting 0.5–1 μm above the surface of the resist. This value depended on the tilt of the sample. Aft...
This is very useful when a negative image and an undercut resist profile are desired. R. B. Darling / EE-527 Physical Requirements on the Photoactive Component • Need an overlap of the absorption spectrum with the emission spectrum of the exposure source, e.g. a Hg lamp. ...
WALKE, AMANDA C Attorney, Agent or Firm: WHDA, LLP (TYSONS, VIRGINIA, US) Claims: The invention claimed is: 1.A positive resist composition comprising:(A) 4.1 to 20 parts by weight of a first onium salt having the formula (1),(B) 2.3 to 8.8 parts by weight of a second onium sa...
There is proposed a positive-type electron-beam resist having high sensitivity and resolution suitable for use in manufacturing an LSIC of 16-megabit or more. The positive-type electron-beam resist consists of mono-polymer of cyclohexyl-2-cyanoacrylate or a copolymer of alkyl-2-cyanocrylate and ...
As feature sizes of semiconductors grow smaller, a resist having dry etching durability and high sensitivity is required for electron beam lithography. However, the positive type electron beam resist having both high sensitivity and high dry etching durability, which suits for practical use, has not...
In accordance with the invention, prior to exposure of the resist coated substrate to the electron beam, the coated substrate is prebaked at an elevated temperature normally above its glass transition temperature, i.e., about 150 degrees C., but below its decomposition temperature for a time fr...
The resist film is then exposed to a desired pattern of high-energy radiation such as UV, deep-UV, electron beam, x-ray, excimer laser light, y-ray, synchrotron radiation or EUV (soft x-ray), directly or through a mask. The exposure dose is preferably about 1 to 200 mJ/cm2, more...