The effect of the temperature on the series resistance R s, the ideality factor n and the barrier height Φ b were investigated. The Cu/p-Si diode shows non-ideal I– V behavior with an ideality factor greater than unity that can be ascribed to the interfacial layer, the interface states...
The Texas Instruments LM74720-Q1 and similar LM74721-Q1 ideal diodes provide high-performance control over a pair of external n-channel MOSFETs via a dual gate-drive topology, for active rectification and reverse-battery protection on automotive DC rails,Figure 2. One of these MOSFETs is contro...
The insulating layer (oxide) screens the semiconductor surface from the metal and helps saturation of unsaturated bonds. The open-circuit photovoltage Voc decreases with increasing Jo, as shown in Equation 3-173. Jo for Schottky barrier diodes is a few orders of magnitude higher than for p–n ...
Upon transition of surface hydroxylates from mixed OH + H2O phases to OHpureat high temperature,the surface iodide decomposes quickly, as reflected by the sharply reduced I/Pb ratio at high temperature (Supplementary Table4)34,35,36. The serious iodine loss may partially stem from the ther...
The nominal hole diameter is 110 nm (inset of Fig. 1b). A detailed sample fabrication process can be found in Methods. The superconducting transition temperature of the sample at zero external magnetic field was approximately 6.0 K (Supplementary Fig. 2). The magnetic fields are applied ...
When only acetonitrile was heated by micro- wave in the absence of SiC, 1.5 minutes were necessary until the temperature inside the vessel reached to 120°C. To the contrary, the temperature reached to the same value within 1 minute in the case of heating with SiC (Fig. 2). These ...
The emission intensity at 200 °C is 95.1% of its value at room temperature, indicating that the phosphor has excellent thermal stability when x = 1.5. These results show the feasibility of using the silicate phosphor for generating the green light component of white light-emitting diodes...
These thermalized carriers can thus reach temperatures significantly higher than the phonon bath temperature (Te>Tph) even under continuous-wave (CW) excitation17 (see Supplementary Note 1 and Supplementary Fig. 1). Moreover, the tunability of the graphene Fermi energy gives control over the ...
Field-effect transistors, because of the conduction voltage drop versus temperature characteristic, tend to share current when operated directly in parallel. (5) The device does not block reverse voltage but has a “built-in” rectifier that has a current rating equivalent to the drain current rat...
These experiments indicate the existence of the second harmonic in the CPR, which is also supported by the rapid suppression observed in temperature-dependent ΔIc compared with Ic in device S1 (see Fig. 2e), because higher harmonics are quickly suppressed when temperature approaches Tc55. The ...