1.理想伏安特性这里所说的理想PN结,是指考虑以下条件:(1)全部外电压降落在耗尽层上,耗尽区以外的区域为电中性,即耗尽层近似;(2)小注入;(3)耗尽层内不存在复合或产生电流,电流全部为少子扩散电流;(4)非简并半导体,载流子服从Boltzmann分布。在正向偏压下,内建电场被削弱,电子从N区扩散到P区,空穴从P区扩散到N...
The ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current–voltage (I–V) characteristics by the conventional method is typically masked by the effect of the ...
Ideality Factor(Diode)二极管理想因子 考虑如下能带图所示的一个 的二极管在正向施加 偏压下的情况: 其中 为内建势垒高度, 为电子准Fermi能级, 为空穴准Fermi能级, 为外加正向偏压。 1.理想伏安特性 这里所说的理想PN结,是指考虑以下条件:(1)全部外电压降落在耗尽层上,耗尽区以外的区域为电中性,即耗尽层近似;...
ideality factor of the anti-parallel diode 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 反并联二极管的理想因子...
When using an external thermal diode to measure temperature, the accuracy of the temperature measurement depends on the characteristics of the external diode. Two critical parameters that affect measurement accuracy are ideality factor and series resistance. This application note explai...
a现状用地 The present situation uses[translate] a你们考多少科? How many branches do you test?[translate] aBased on Figure 4(a), we deduced the value of the ideality factor (n) of the diode. 基于图4 (a),我们推论了ideality因素(n的)价值二极管。[translate]...
1. 管理想因子 ...这种技术已制成了100nm以下P+/n结,其二 级管理想因子(diode ideality factor)约为1.05,体漏电流密约 2 2nA/cm ,利用BF等 … wenku.baidu.com|基于4个网页 2. 二极管理想因子 二极管理想因子,... ... ) ideal noise diode 理想噪声二极管 )Diode Ideality Factor二极管理想因子) ideal...
Furthermore, the extrapolations of the linear plot the experimental barrier heights (BHs) versus ideality factors to the ideality factor have given the laterally homogeneous BHs of approximately 0.683 and 0.656 eV for the reference and MIS Sn/n-Si SBDs. 展开 ...
1d. Therefore, the current is increased super-exponentially and the ideal factor below 1 is obtained in the diode with graphene electrode as the injection source. Therefore, the switching slope of a diode, i.e. η < 1, is obtained in the diode with a graphene electrode as the cold ...
(C-AFM).In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters.By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_(bi)=0.5425 V and the barrier height valueΦ_(b...