The relatively weak structure of the F CP was not separable from that of the E CP at temperatures above 180 K although the amplitude of the F CP is non-negligible. In Fig. 6b, the kink of the temperature dependence of E CP was caused by eliminating the overlapped F CP. Table 2 ...
Backward tunnel diodeElectrical characteristicsPeak currentValley currentPeak-to-valley current ratioNegative differential resistance and OscillatorIn the present paper, a package of BD-4 germanium backward tunnel diodes, which widely used in modern electronic systems were chosen for studying its operation ...
Temperature dependence of the device constant (n) of junction Mode is experimentally measured. It has been found that it varies linearly with temperature. Experiment has been performed on different types of LEDs and a low leakage silicon diode. It has been shown that the percentage difference in...
Finally, we have deduced the parameter n of the temperature dependence (inverse power law) of the broadening coefficients for the CH 4 –N 2 and CH 4 –O 2 gas mixtures. 展开 关键词: Tunable diode-laser Methane Line profile Broadening coefficients Temperature dependence ...
Furthermore, the rates of the intramolecular electron transfer exhibit a distinct temperature dependence that can be described with an Arrhenius law in the nanosized complex. Another important characteristic is that a ferromagnetic interaction operates in [Fe14] with a ground spinS = 14, which ...
Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes Temperature-dependent electroluminescence (EL) intensity of a blue (In,Ga)N single quantum-well diode has been extensively investigated as a function of cu... K Fujiwara,H Jimi,K Kaneda - 《Physica...
The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode. J Mater Sci: Mater Electron 32, 18886–18899 (2021). https://doi.org/10.1007/s10854-021-06406-3 Download citation Received10 May 2021 Accepted12 June 2021 Published25 June 2021 Issue DateJuly 2021...
The avalanche multiplication and impact ionization coefficients in In0.53Ga0.47As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage mea...
Photoreflectance has been used to measure the direct band gap of ${mathrm{In}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{-}mathit{x}}$As (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the ...
A new approach to improve the high-voltage vertical double diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse re...