Tunneling effectPhotocurrentOptical generation rateThermal stressTo get useful information about the carrier transport mechanism we first measure the current-voltage (I-V) characteristics of a silicon p-n photodiode (VTB8440BH) in the temperature range 350 - 110 K. All semilog I-V curves exhibit...
The effect of temperature on the performance of uncooled semiconductor laser diode in optical network. J. Comput. Sci., 8: 84-88. DOI: 10.3844/jcssp.2012.84.88Mohammad S;Nurain I S.The effect of temperature on the performance of uncooled semiconductor laser diode opticl network.Computer ...
Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode 来自 AIP Publishing 喜欢 0 阅读量: 38 作者:K Ejderha,S Duman,C Nuhoglu,F Urhan,A Turut 摘要: In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron ...
1.1 Changes in Electrical Capability Low temperature can significantly reduce the electrical capability of electronic components, especially forIntegrated circuitThediodeAndMOSFETVery obvious for the device. Because at low temperatures, electrons andLatticeThe increase in lattice interactions slows down the mov...
The effect of temperature on the key cell parameters such as open circuit voltage, short circuit current, maximum output power, and conversion efficiency were investigated over the temperature range −20 °C to 100 °C. Materials and Methods Device structure and X-ray source The In0.5Ga...
The performance of heterojunction metal-semiconductor-field- effect-transistors (MESFETs) and junction-field-effect- transistors (JFETs) fabricated with different buffers is presented. For the JFET, carbon was chosen as the p-type dopant because of its relative low diffusivity compared to other dopin...
the IS values of FeII-hs anomalously rise upon an increase in the temperature and do not obey a second-order Doppler shift effect at high temperatures. However, the average FeII-hs and FeIII-hs IS values at the B sites exhibit a linear shift with temperature. A similar behavior has previ...
Four-and five-parameter one-diode models, two-diode model, ... AT Bryant,X Kang,E Santi,... - 《IEEE Transactions on Power Electronics Pe》 被引量: 0发表: 2006年 Circuit modeling of the effect of temperature on semiconductor Lasers circuit simulator.The circuit model is developed from ...
In addition, the effect of colour temperature and illuminance on mental workload may be nonlinear, but there is a suitable range for relatively low mental workload. The purpose of the present study was to investigate the effects of illuminance and colour temperature on mental workload by EEG ...
The invention discloses a junction temperature testing device and a junction temperature testing method based on the temperature variation of LED (light-emitting diode) relative spectrum, belonging to the field of LED photoelectric detection. The junction temperature testing device based on the temperatur...