Gray-scale e-beam lithography has been performed to match the EUV and e-beam aerial image log slope for studying shot noise fundamentals in the two mechanisms through line-edge roughness (LER) measurements for 50 nm lines and spaces patterned on a leading chemically amplified EUV resist. The ...
Extreme Ultraviolet (EUV) Direct Transfer Imprint Step&Flash Photolithography E-Beam Lithography Optical Lithography Optical Lithography Resolution controlled by λ and z Mask issues: 1x, damage Resolution affected by λ, NA Mask 4x, protected
Workarounds for EUV mask pellicles that are outside the optical wavelengths used for reticle inspection tools.February 14th, 2018 - By: KLA As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there i...
“The system throughput is also helped by a high-speed stage shared with ASML lithography systems and a high-speed computational architecture to process the streams of data from the multiple beamlets in real time.” There are some potential issues with this approach. Each beamlet may have a ...
We propose COlaser-produced plasma as the extreme ultraviolet (EUV) light source for future optical lithography. The laser beam from a transversely-excited... H Tanaka,K Akinaga,A Takahashi,... - High-power Laser Ablation V 被引量: 18发表: 2004年 Numerical simulations of space charge effect...
Overcoming pattern collapse on e-beam and EUV lithography. In: Proc. SPIE 6153, 2006. 61531CA. Jouve, J. Simon, A. Pikon, H. Solak, C. Vannuffel and J-H Tortai, "Overcoming pattern collapse on e-beam and EUV lithography", Proc. SPIE 6153 (2006) 61531C....
Recently, ASML/HMI introduced their first jointly developed system. It combines HMI’s e-beam tool with ASML’s computational lithography engine. With the computational engine, ASML is able to model and simulate the reticle features and how they would translate on the wafer. “If you do that,...
PHOTORESIST FOR EUV AND/OR E-BEAM LITHOGRAPHYA photoresist including a photochromic compound suitable for extreme ultraviolet lithography or electron-beam lithography and a structure including the photoresist over a substrate are provided. A method for patterning a substrate is also provided and includes...
Motivation; Inorganic photoresist Results; Nanoparticle synthesis and characterization; Optical and e-beam lithography; Etch Resistance; Pattern Transfer.Marie KrysakMarkos TrikeriotisEvan SchwartzWoo Jin BaeNeal LaffertyPeng XieBruce SmithWarren Montgomery...
B. Lin et al., "Successors of ArF water-immersion lithography: EUV lithography, multi-e-beam maskless lithography, or nanoimprint?" in J Micro/Nanolith. MEMS MOEMS, 2008.Burn J. Lin. Successors of ArF Water-Immersion Lithography: EUV Lithography, Multi-e-beam Maskless Lithography, or ...