M. Hertz, "Liquid-jet target laser-plasma sources for EUV and x-ray lithography", Microelectron. Eng. 46, 453 - 455 (1999)Rymell, L. et al; " Liquid-jet target laser-plasma sources for EUV and X-ray lithography "; Microelectronic Engineering, Elsevier Publishers BV., Amsterdam, NL, ...
目前最先进的光学光刻是EUV，极紫外光刻。我们也称之为软X射线光刻，既有光学光刻的特征，也有X射线光刻...
Emission from a gas puff target irradiated with a Nd:YAG laser for EUV and x-ray lithography 来自 ResearchGate 喜欢 0 阅读量: 26 作者:H Fiedorowicz,H Daido,A Bartnik,N Sakaya,T Wilhein 摘要: Soft x-ray and extreme-UV emissions form plasmas produced using a gas puff target irradiated ...
从聚束器 出射的X射线，经过一段距离的交叉混合形成均匀 分布的准平行束，投射到光刻工作台上，将掩膜...
Soft X-Ray Microscopy Soft X-ray Microscopy is used for imaging and researching the elemental composition and structure of biological samples and more. EUV Lithography EUV lithography is gaining popularity because it retains the look and feel of the traditional optical lithography process (i.e utiliz...
After ramping up their respective 16nm/14nm finFET processes, chipmakers are moving towards 10nm and/or 7nm, with 5nm in R&D. But as they move down the process roadmap, they will face a new set of fab challenges. In addition to lithography and interconnects, there is metrology. Metrology...
Zmievskaya Computer simulation of blistering in multilayer mirrors for EUV lithography J Surf Investig X-Ray, Synchrotron Neutron Tech, 4 (2010), pp. 480-487, 10.1134/S1027451010030201 View in ScopusGoogle Scholar [50] G. Smolentsev, A. Guda, X. Zhang, K. Haldrup, E.S. Andreiadis, M....
We will present the high resolution concepts and performances of our latest EUV sensitive Si-HM for 1X nm generation in EUV lithography. 机译:三层工艺是围绕Hp20nm图案进行光刻和蚀刻的关键技术之一。在申请三层工艺时,我们将重点放在主要含Si原子的无机型底层上。该Si型硬掩模(Si-HM)不...
Similarly, FELs in the EUV-to-soft-X-ray wavelength level are now being vigorously pursued to enable next-generation chip lithography sources. The research and development for a very-high-flux, highly coherent XFEL represents a comparable level of challenge, the details of which we describe in ...
REFLECTIVE OPTICAL ELEMENT FOR EUV LITHOGRAPHY DEVICE A reflective optical element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer ( 23 a, 23 b ) and a second additi... AE ...