In this work, the novel characteristics of a FinFET with dual-material gate (DMG) are explored theoretically using a 3D numerical simulator and compared with those of a single material gate (SMG) FinFET in terms of threshold voltage roll off, drain induced barrier lowering (DIBL) and the ...
An improved analog electrical performance of submicron Dual-Material gate (DM) GaAs-MESFETs using multi-objective computation In this paper, new modeling and optimization approaches are proposed to improve the electrical behavior of the submicron Dual-Material-gate (DM) Gallium Ar... F Djeffal,N...
A first gate structure may be formed on the germanium containing fin structures. A III-V fin structure may then be formed on the sidewalls of the mandrel structure. The mandrel structure may be removed. A second gate structure may be formed on the III-V fin structure.Effendi Leobandung...
The novelty aspects of symmetric dual-k spacer (SDS) trigate wavy FinFET.The impact of dual material gate oxide (DMGO) in SDS wavy FinFET.Evaluation of tem... KP Pradhan,Priyanka,PK Sahu - 《Superlattices & Microstructures》 被引量: 2发表: 2016年 Comparative Study of Different Material ...
The dual-gate FET (DGFET) is a four terminal device which is usually operated in a common source configuration. The first gate, next to the source, is used as the input port and the drain as the output port. The presence of the second gate, which is used as a control terminal, give...
dual gate fet 美 英 un.双栅场效应晶体管 英汉 un. 1. 双栅场效应晶体管
Specifications: Material: High-quality Silicon Quantity: 20PCS/LOT Type: N-Channel Dual Gate MOS-FET Category: Integrated Circuits Design and Style: Advanced Dual Gate Architecture Performance: High-Speed Switching and Low RDS(on) Parts and Accessories: Includes 20 BF981 MOS-FETs Features: **Adva...
In this paper, we propose the application of a dual material gate (DMG) in a tunnel field-effect transistor (TFET) to simultaneously optimize the on-current, the off-current, and the threshold voltage and also improve the average subthreshold slope, the nature of the output characteristics, an...
Work function (WF) control of a metal gate is an essential issue for a FinFET with an intrinsic channel. Although the mid-gap metal gate such as TiN meets the LSTP requirements, the dual metal gate technology is necessary for LOP application, where a lower threshold voltage (Vth) than tha...
However, as the gate l... KL Nummila - 《Dissertations & Theses》 被引量: 0发表: 1993年 Dual material gate field effect transistor (DMG-FET). Improving performance and suppressing short channel effects are two of the most important issues in present field effect transistors development. Hence...