In this work, the novel characteristics of a FinFET with dual-material gate (DMG) are explored theoretically using a 3D numerical simulator and compared with those of a single material gate (SMG) FinFET in terms of threshold voltage roll off, drain induced barrier lowering (DIBL) and the ...
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 来自 国家科技图书文献中心 喜欢 0 阅读量: 68 作者:GB Beneventi,E Gnani,A Gnudi,S Reggiani,G Baccarani 摘要: A novel approach to optimize tunnel field-effect transistors (TFETs) by technology computer-aided ...
A first gate structure may be formed on the germanium containing fin structures. A III-V fin structure may then be formed on the sidewalls of the mandrel structure. The mandrel structure may be removed. A second gate structure may be formed on the III-V fin structure.Effendi Leobandung...
The dual-gate FET (DGFET) is a four terminal device which is usually operated in a common source configuration. The first gate, next to the source, is used as the input port and the drain as the output port. The presence of the second gate, which is used as a control terminal, give...
BF1205C 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads原创声明:本文为恩智浦原创内容,未经书面授权,不得以任何方式加以使用。 转载合作 基础器件 恩智浦...
dual gate fet 美 英 un.双栅场效应晶体管 英汉 un. 1. 双栅场效应晶体管
Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i . e ., ultra-thin-bo... Pradhan,P K.,Priyanka,... - 《Superlattices & Microstructures》 被引量: 1发表: 2016年 Comparative Study of Different Material Tri...
The hetero dielectric that we have used at the gate is a combination of SiO2 and HfO2. The DMG technique is used to optimize the performance of DGT-FET along with the mono/hetero dielectric gate material. The results obtained from the simulation are discussed using energy band diagram, ...
Work function (WF) control of a metal gate is an essential issue for a FinFET with an intrinsic channel. Although the mid-gap metal gate such as TiN meets the LSTP requirements, the dual metal gate technology is necessary for LOP application, where a lower threshold voltage (Vth) than tha...
(PBE-GGA) level33. The plane wave basis was set to have a kinetic energy cutoff of 350 eV. The relaxation was deemed to be complete when the residual force on each atom was less than 0.05 eV/Å. The charge transport properties of the two-probe systems with different gate ...